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參數(shù)資料
| 型號： | 2N3227UB |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon NPN Transistor |
| 中文描述： | 硅NPN晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 241K |
| 代理商： | 2N3227UB |
Copyright
2002
Rev. J
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 2 of 2
2N3227UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
°
C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
C
= 10 mA
V
CB
= 40 Volts
V
CB
= 32 Volts
V
CB
= 20 Volts, T
A
= 150
°
C
V
CE
= 10Volts, V
EB
= 0.25Volts
T
A
= 125
°
C
V
CE
= 20 Volts
V
EB
= 6 Volts
V
EB
= 4 Volts
Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%
20
Collector-Base Cutoff Current
10
0.2
30
μ
A
Collector-Emitter Cutoff Current
I
CEX
30
μ
A
Collector-Emitter Cutoff Current
I
CES
I
EBO1
I
EBO2
400
10
0.25
nA
Emitter-Base Cutoff Current
μ
A
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
Test Conditions
I
C
= 10 mA, V
CE
= 0.35 Volts
I
C
= 30 mA, V
CE
= 0.4 Volts
I
C
= 10 mA, V
CE
= 1 Volts
I
C
= 100 mA, V
CE
= 1 Volts
I
C
= 10 mA, V
CE
= 1 Volts
T
A
= -55
°
C
I
C
= 10 mA, I
B
= 1 mA
I
C
= 30 mA, I
B
= 3 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 10mA, I
B
= 1mA,
T
A
=+125
°
C
I
C
= 10mA, I
B
= 1mA,
T
A
= -55
°
C
I
C
= 10 mA, I
B
= 1 mA
I
C
= 30 mA, I
B
= 3 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 10mA, I
B
= 1mA,
T
A
=+125
°
C
Min
70
40
75
30
20
0.70
0.80
0.50
Typ
Max
250
250
300
150
0.85
0.90
1.20
1.02
0.20
0.25
0.45
0.30
Units
DC Current Gain
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
V
BEsat3
V
BEsat4
V
BEsat5
V
CEsat1
V
CEsat2
V
CEsat3
V
CEsat4
Volts
Collector-Emitter Saturation Voltage
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
V
CE
= 10 Volts, I
C
= 10 mA,
f = 100 MHz
V
CB
= 5 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
I
C
= 10 mA, I
B1
=I
B2
= 10 mA
I
C
= 10 mA, I
B1
= 3 mA,
I
B2
= 1.5 mA
I
C
= 10 mA, I
B1
= 3 mA,
I
B2
= 1.5 mA
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
5
10
Open Circuit Output Capacitance
C
OBO
4
pF
Open Circuit Input Capacitance
C
IBO
4
pF
Storage Time
t
s
18
ns
Saturated Turn-On Time
t
ON
12
ns
Saturated Turn-Off Time
t
OFF
25
ns
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