參數(shù)資料
型號(hào): 2N3209DCSM
英文描述: Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開(kāi)關(guān)型雙PNP晶體管(高可靠性、陶瓷表貼封裝))
中文描述: 雙高速中功率開(kāi)關(guān)晶體管進(jìn)步黨在全封閉六窯業(yè)表面貼裝封裝,高可靠性的應(yīng)用(高速,中等功率,開(kāi)關(guān)型雙進(jìn)步黨晶體管(高可靠性,陶瓷表貼封裝))
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 16K
代理商: 2N3209DCSM
Prelim. 2/00
LA B
S E M E
2N3209DCSM
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Turn-on Time
Test Conditions
V
CC
= 2V
I
C
= 30mA
V
CC
= 2V
I
B1
= I
B2
= 1.5mA
Min.
Typ.
Max.
60
Unit
ns
t
on
t
off
Turn-off Time
I
B1
= 1.5mA
I
C
= 30mA
Parameter
Transition Frequency
Capacitance
Input Capacitance
Test Conditions
I
C
= 30mA
V
CE
= 10V
V
EB
= 0.5V
I
C
= 0
V
CB
= 5V
I
E
= 0
Min.
400
Typ.
Max.
Unit
MHz
pF
pF
Parameter
Collector
Emitter Sustaining Voltage
Collector
Base Breakdown Voltage
Emitter
Base Breakdown Voltage
Test Conditions
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
V
CE
= 10V
V
CE
= 10V
T
C
= 125
°
C
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 30mA
Min.
-20
-20
-4
Typ.
Max.
Unit
V
V
V
nA
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
I
C
= 0
V
BE
= 0
V
BE
= 0
I
B
= 1mA
I
B
= 3mA
I
B
= 10mA
I
B
= 1mA
I
B
= 3mA
I
B
= 10mA
V
CE
= 0.3V
V
CE
= 0.5V
V
CE
= 1V
V
CE
= 0.5V
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CES*
Collector Cut-off Current
V
CE(sat)*
Collector
Emitter Saturation Voltage
V
BE(sat)*
Base
Emitter Saturation Voltage
h
FE*
DC Current Gain
T
amb
=
55
°
C
80
10
0.15
0.20
0.60
0.98
1.2
1.7
0.78
0.85
25
30
15
12
120
m
A
V
V
f
T
C
EBO
C
CBO
f = 100MHz
f = 1.0MHz
f = 1.0MHz
6.0
5.0
90
ns
ELECTRICAL CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
* Pulse test t
p
= 300
m
s ,
d £
2%
DYNAMIC CHARACTERISTICS
(Tcase= 25
°
C unless otherwise stated)
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