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參數(shù)資料
| 型號： | 2N3209DCSM |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
| 中文描述： | 200 mA, 20 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, LCC-6 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | 2N3209DCSM |
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/93
LAB
SEME
2N3209CSM
Parameter
Turn-on Time
Test Conditions
V
CC
= 2V
I
C
= 30mA
V
CC
= 2V
I
B1
= I
B2
= 1.5mA
Min.
Typ.
Max.
60
Unit
ns
t
on
t
off
Turn-off Time
I
B1
= 1.5mA
I
C
= 30mA
Parameter
Transition Frequency
Capacitance
Input Capacitance
Test Conditions
I
C
= 30mA
V
CE
= 10V
V
EB
= 0.5V
I
C
= 0
V
CB
= 5V
I
E
= 0
Min.
400
Typ.
Max.
Unit
MHz
pF
pF
Parameter
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Test Conditions
I
C
= 10mA
I
C
= 10
μ
A
I
E
= 10
μ
A
V
CE
= 10V
V
CE
= 10V
T
C
= 125°C
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 30mA
Min.
-20
-20
-4
Typ.
Max.
Unit
V
V
V
nA
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
I
C
= 0
V
BE
= 0
V
BE
= 0
I
B
= 1mA
I
B
= 3mA
I
B
= 10mA
I
B
= 1mA
I
B
= 3mA
I
B
= 10mA
V
CE
= 0.3V
V
CE
= 0.5V
V
CE
= 1V
V
CE
= 0.5V
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CES*
Collector Cut-off Current
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
T
amb
= –55°C
80
10
0.15
0.20
0.60
0.98
1.2
1.7
0.78
0.85
25
30
15
12
120
μ
A
V
V
—
f
T
C
EBO
C
CBO
f = 100MHz
f = 1.0MHz
f = 1.0MHz
6.0
5.0
90
ns
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
* Pulse test t
p
= 300
μ
s ,
δ ≤
2%
DYNAMIC CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
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| 2N3211 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 500MA I(C) | TO-18 |
| 2N3212 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-37 |
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