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參數(shù)資料
| 型號： | 2N3055 |
| 廠商： | 意法半導體 |
| 英文描述： | Complementary Silicon Power Transistors(補償型硅功率晶體管) |
| 中文描述： | 互補硅功率晶體管（補償型硅功率晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 49K |
| 代理商： | 2N3055 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.5
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 100 V
V
CE
= 100 V T
j
= 125
o
C
1
5
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
CER(sus)
Collector-Emitter
Sustaining Voltage
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE
Base-Emitter Voltage
h
FE
DC Current Gain
V
CE
= 30 V
0.7
mA
I
EBO
V
EB
= 7 V
5
mA
I
C
= 200 mA
700
V
I
C
= 200 mA R
BE
= 100
70
V
I
C
= 4 A I
B
= 400 mA
I
C
= 10 A I
B
= 3.3 A
I
C
= 4 A V
CE
= 4 A
1
3
V
V
1.5
V
I
C
= 4 A V
CE
= 4 A
I
C
= 10 A V
CE
= 4 A
I
C
= 1 A V
CE
= 4 A
20
5
70
f
T
Transition frequency
2.5
MHz
I
s/b
Second Breakdown
Collector Current
V
CE
= 40 V
2.87
A
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
2N3055 / MJ2955
2/4
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| 2N3022 | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3055 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N3055/5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N3055/6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 15A I(C) | TO-3 |
| 2N3055/7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 15A I(C) | TO-3 |
| 2N3055/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon Power Transistors |
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