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參數(shù)資料
| 型號(hào)： | 2N3019 |
| 廠商： | Boca Semiconductor Corp. |
| 英文描述： | GENERAL TRANSISTOR NPN SILICON |
| 中文描述： | 一般晶體管NPN硅 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 17K |
| 代理商： | 2N3019 |
Prelim.6/99
2N3019
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Transition Frequency
Output Capacitance
Input Capacitance
Small Signal Current Gain
Collector Base Time Constant
Test Conditions
I
C
= 50mA
V
CE
= 10V
V
CB
= 10V
I
E
= 0
V
BE
= 0.5V
I
C
= 0
I
C
= 1mA
V
CE
= 5V
I
E
= 10mA
V
CB
= 10V
I
C
= 100
m
A
V
CE
= 10V
R
S
= 1K
W
Min.
100
Typ.
Max.
400
12
60
400
400
Unit
MHz
pF
pF
—
ps
db
Parameter
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Test Conditions
I
C
= 30mA
I
C
= 100
m
A
I
E
= 100
m
A
V
CB
= 90V
V
CB
= 90V
T
amb
= 150°C
V
BE
= 5V
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 0.1mA
I
C
= 10mA
I
C
= 150mA
I
C
= 500mA
I
C
= 1A
I
C
= 150mA
Min.
80
140
7
Typ.
Max. Unit
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
I
B
= 0
I
E
= 0
I
C
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 0.5V
V
(BR)CEO
V
(BR)CBO*
V
(BR)EBO*
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
T
C
= –55°C
0.01
10
0.010
0.20
0.50
1.1
50
90
100
50
15
40
300
V
V
V
m
A
m
A
V
V
—
f
T
C
obo
C
ibo
h
fe
rb’C
c
NF
Noise Figure
f = 20MHz
f = 1.0MHz
f = 1.0MHz
f = 1kHz
f = 79.8MHz
f = 1kHz
80
15
4
t* Pulse test tp = 300
m
s ,
d ￡
1%
DYNAMIC CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3019 | DIP Socket; No. of Contacts:42; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:Solder Tail; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
| 2N3019 | NPN SILICON PLANAR TRANSISTOR |
| 2N3019 | LOW POWER NPN SILICON TRANSISTOR |
| 2N3019S | LOW POWER NPN SILICON TRANSISTOR |
| 2N3019CSM | Tubular Radial Lead Capacitor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3019 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N3019_01 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN SILICON TRANSISTOR |
| 2N3019_02 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SMALL SIGNAL NPN TRANSISTOR |
| 2N3019_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N3019CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
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