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參數(shù)資料
| 型號(hào)： | 2N2920ADCSM |
| 英文描述： | NPN |
| 中文描述： | 叩 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2N2920ADCSM |
2N2920DCSM
–
QR
–
B
Prelim.11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS
(Tamb= 25
°
C unless otherwise stated)
Parameter
TRANSISTOR MATCHING CHARACTERISTICS
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as h
FE1
.
3) Average noise figure is measured in an amplifier with response down 3dB at 10Hz and 10 kHz and a high frequency
rolloff of 6dB / octave.
Test Conditions
Min.
Typ.
Max.
Unit
—
mV
mV
0.9
1
5
3
0.8
1
h
FE1
h
FE2
Static Forward Current Gain
Balance Ratio
|V
BE1
–
V
BE2
|
Base
–
Emitter Voltage
Differential
|
D
(V
BE1
–
V
BE2
)
D
T
A
|
Base
–
Emitter Voltage
Differential
V
CE
=
–
5V
See Note 2.
V
CE
=
–
5V
I
C
=
–
10
m
A to
–
10mA
V
CE
=
–
5V
V
CE
=
–
5V
T
A1
= 25
°
C
V
CE
=
–
5V
T
A1
= 25
°
C
I
C
=
–
100
m
A
I
C
=
–
100
m
A
I
C
=
–
100
m
A
T
A2
=
–
55
°
C
I
C
=
–
100
m
A
T
A2
= 125
°
C
OPERATING CHARACTERISTICS
(Tamb= 25
°
C unless otherwise stated)
Parameter
INDIVIDUAL TRANSISTOR CHARACTERISTICS
Test Conditions
1
Min.
Typ.
Max.
Unit
dB
dB
7
3
2.5
3.5
F
Spot Noise Figure
_
F
Average Noise Figure
V
CE
=
–
10V
R
G
= 3k
W
Noise Bandwidth = 20Hz
V
CE
=
–
10V
R
G
= 3k
W
Noise Bandwidth = 200Hz
V
CE
=
–
10V
R
G
= 3k
W
Noise Bandwidth = 2kHz
V
CE
=
–
10V
R
G
= 3k
W
Noise Bandwidth = 15.7kHz
See Note 3.
I
C
=
–
100
m
A
f = 100Hz
I
C
=
–
100
m
A
f = 1kHz
I
C
=
–
100
m
A
f = 10kHz
I
C
=
–
100
m
A
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