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參數(shù)資料
| 型號： | 2N2907ADCSM |
| 英文描述： | Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開關(guān)型雙PNP晶體管（高可靠性、陶瓷表貼封裝）) |
| 中文描述： | 雙高速中功率開關(guān)晶體管進步黨在全封閉六窯業(yè)表面貼裝封裝，高可靠性的應用（高速，中等功率，開關(guān)型雙進步黨晶體管（高可靠性，陶瓷表貼封裝）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 41K |
| 代理商： | 2N2907ADCSM |
Parameter
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
Test Conditions
V
CC
= 30V
I
C
= 150mA
I
B1
= 15mA
V
CC
= 6V
I
C
= 150mA
I
B1
= I
B2
= 15mA
Min.
Typ.
26
6.0
20
70
50
20
Max.
45
10
40
100
80
30
Unit
LA B
S E M E
Prelim.
3/00
2N2907ADCSM
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
Transition Frequency
Output Capacitance
Input Capacitance
Test Conditions
I
C
= 50mA
V
CE
= 20V
V
CB
= 10V
I
E
= 0
V
BE
= 2V
I
C
= 0
Min.
200
Typ.
Max.
Unit
MHz
pF
pF
Parameter
Collector
–
Emitter Sustaining Voltage
Collector
–
Base Breakdown Voltage
Emitter
–
Base Breakdown Voltage
Collector Cut-off Current
Test Conditions
I
C
= 10mA
I
C
= 10
m
A
I
E
= 10
m
A
V
CE
= 30V
I
E
= 0
T
C
= 125
°
C
V
CE
= 30V
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 150mA
I
C
= 500mA
Min.
–
60
–
60
–
5
Typ.
Max.
Unit
V
V
V
nA
ELECTRICAL CHARACTERISTICS PER SIDE
(T
C
= 25
°
C unless otherwise stated)
I
C
= 0
V
BE
= 0.5V
V
CB
= 50V
V
BE
= 0.5V
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
I
B
= 50mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEX*
I
CBO*
Collector
–
Base Cut-off Current
I
BEO
Base Cut-off Current
V
CE(sat)*
Collector
–
Emitter Saturation Voltage
V
BE(sat)*
Base
–
Emitter Saturation Voltage
h
FE*
DC Current Gain
50
0.01
10
50
–
0.4
–
1.6
–
1.3
–
2.6
75
100
100
100
50
300
m
A
nA
V
V
—
f
T
C
ob
C
ib
f = 100MHz
f = 1.0MHz
f = 1.0MHz
8
30
t
on
t
d
t
r
t
off
t
s
t
f
ns
ns
SWITCHING CHARACTERISTICS PER SIDE (RESISTIVE LOAD)
(T
C
= 25
°
C unless otherwise stated)
* Pulse test t
p
= 300
m
s ,
d ￡
2%
DYNAMIC CHARACTERISTICS PER SIDE
(T
C
= 25
°
C unless otherwise stated)
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| 2N2907A | General Purpose Amplifiers and Switches(硅平面外延工藝PNP晶體管(用于高速飽和開關(guān))) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2907ADCSM_08 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR |
| 2N2907ADIE | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR PNP SILICON |
| 2N2907AE3 | 制造商:Microsemi Corporation 功能描述:2N2907AE3 - Bulk |
| 2N2907AHR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Hi-Rel 60 V, 0.6 A PNP transistor |
| 2N2907AJ.TX.V | 制造商:RAYTHEON 制造商全稱:RAYTHEON 功能描述:Medium Current General Purpose Amplifiers and Switches |
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