參數(shù)資料
型號(hào)： 2N2906AUB
廠商： MICROSEMI CORP
元件分類： 小信號(hào)晶體管
英文描述： PNP SMALL SIGNAL SILICON TRANSISTOR
中文描述： 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： HERMETIC SEALED, CERAMIC, CERSOT-3
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 44K
代理商： 2N2906AUB
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2906A
2N2907A
TO-18
Switching And Linear Application DC to VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2906A, 07A
UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25deg C
@ Tc=25 degC
Derate Above 25deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
VCEO
VCBO
VEBO
IC
PD
60
60
5.0
600
400
2.28
1.8
10.3
V
V
V
mA
mW
mW/deg C
PD
W
mW/deg C
Tj, Tstg
deg C
DESCRIPTION
SYMBOL
TEST CONDITION
VALUE
MIN
60
60
5.0
-
MAX
UNIT
V
V
V
nA
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO*
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=50V, IE=0
-
-
-
10
Ta=150 deg C
VCB=50V, IE=0
VCE=30V, VBE=0.5V
VCE=30V, VBE=0.5V
-
-
-
-
10
50
50
0.4
1.6
1.3
2.6
uA
nA
nA
V
V
V
V
ICEX
IB
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
Base Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
-
-
2N2906A
2N2907A
DC Current Gain
hFE
IC=0.1mA,VCE=10V
IC=1mA,VCE=10V
IC=10mA,VCE=10V
IC=150mA,VCE=10V*
IC=500mA,VCE=10V*
>40
>40
>40
40-120
>40
>75
>100
>100
100-300
>50
http://www.bocasemi.com page: 1
Boca Semiconductor Corp.
BSC
相關(guān)PDF資料
PDF描述
2N2906E 2.0A,100V,25NS,UF Avalanche,SMD
2N2907ACSM High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開(kāi)關(guān)型PNP晶體管（高可靠性、陶瓷表貼封裝）)
2N2907ADCSM Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開(kāi)關(guān)型雙PNP晶體管（高可靠性、陶瓷表貼封裝）)
2N2907A General Purpose Amplifiers and Switches(硅平面外延工藝PNP晶體管(用于高速飽和開(kāi)關(guān)))
2N2920DCSM-QR-B 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2906AUBC 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RADIATION HARDENED
2N2906AUBJANSR 制造商:Microsemi Corporation 功能描述:
2N2906CSM 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1
2N2906DCSM 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed
2N2906E 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*