- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄33223 > 2N2906AJS (SEMICOA CORP) 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N2906AJS |
| 廠(chǎng)商： | SEMICOA CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 463K |
| 代理商： | 2N2906AJS |
Rev. J
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N2906A
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
60
Volts
Collector-Base Cutoff Current
ICBO1
VCB = 60 Volts
10
A
Collector-Base Cutoff Current
ICBO2
VCB = 50 Volts
10
nA
Collector-Base Cutoff Current
ICBO3
VCB = 50 Volts, TA = 150
OC
10
A
Collector-Emitter Cutoff Current
ICES
VCE = 50 Volts
50
nA
Emitter-Base Cutoff Current
IEBO1
VEB = 5 Volts
10
A
Emitter-Base Cutoff Current
IEBO2
VEB = 4 Volts
50
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
TA = -55
OC
40
20
175
120
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.6
1.3
2.6
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 20 Volts, IC = 20 mA,
f = 100 MHz
2.0
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
40
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
8
pF
Open Circuit Input Capacitance
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
30
pF
Switching Characteristics
Saturated Turn-On Time
ton
45
ns
Saturated Turn-Off Time
toff
300
ns
Semicoa Corporation
Copyright
2010
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2906A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N2906AUBC | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2907AUB-TR | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2906A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N2904A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2906AJTX | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N2906AJX | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N2906AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 3PIN TO-18 - Bulk |
| 2N2906AMC | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-18 |
| 2N2906AUA | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 4PIN UA - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。