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參數(shù)資料
| 型號： | 2N2905A |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP BIPOLAR TRANSISTOR |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | 2N2905A |
NOTES:
1) Pulse test: t
p
￡
300
m
s ,
d ￡
2%
2) f
T
is defined as the frequency at which h
FE
extrapolates to unity.
Parameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
LAB
SEME
2N2905A
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
C
= –10mA
I
C
= –10
m
A
I
E
= –10
m
A
V
CE
= –30V
I
E
= 0
I
B
= 0
I
E
= 0
I
C
= 0
V
BE
= –0.5V
V
CB
= –50V
T
A
= 150°C
V
BE
= –0.5V
V
CE
= –30V
I
C
= –150mA
I
C
= –500mA
I
C
= –150mA
I
C
= –500mA
I
C
= –0.1mA
I
C
= –1mA
I
C
= –10mA
I
C
= –150mA
I
C
= –500mA
I
B
= –15mA
I
B
= –50mA
I
B
= –15mA
I
C
= –50mA
V
CE
= –10V
V
CE
= –10V
V
CE
= –10V
V
CE
= –10V
1
V
CE
= –10V
1
I
C
= –50mA
f = 100MHz
V
CB
= –10V
f = 1.0MHz
V
BE
= –2V
f = 1.0MHz
V
CE
= –20V
I
E
= 0
I
C
= 0
V
CC
= –30V
I
C
= –150mA
I
B1
= –15mA
V
CC
= –6V
I
C
= –150mA
I
B1
= I
B2
= –15mA
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
1
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
B
Base Current
V
CE(sat)
1
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
h
FE
DC Current Gain
f
T
Transition Frequency
2
C
ob
Output Capacitance
C
ib
Input Capacitance
t
on
t
d
t
r
t
off
t
s
t
f
Turn–On Time
Delay Time
Rise Time
Turn–Off Time
Storage Time
Fall Time
–60
–60
–5
–50
–0.01
–10
–50
–0.4
–1.6
–1.3
–2.6
75
100
100
100
50
300
200
8
30
26
6
20
70
50
20
45
10
40
100
80
30
V
V
V
nA
m
A
nA
V
V
—
MHz
pF
pF
ns
ns
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
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