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參數(shù)資料
| 型號： | 2N2904AUB |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Chip Type 2C2904A Geometry 0600 Polarity PNP |
| 中文描述： | 片式2C2904A幾何0600極性進步黨 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 18K |
| 代理商： | 2N2904AUB |
Parameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
Collector–Emitter Breakdown Voltage
1
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
B
Base Current
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE(sat)
Collector – Emitter Saturation Voltage
1
V
BE(sat)
Base – Emitter Saturation Voltage
f
t
Current Gain Bandwidth Product
2
C
obo
Output Capacitance
C
ibo
Input Capacitance
t
on
t
d
t
r
t
off
t
s
t
f
Turn–On Time
Delay Time
RiseTime
Turn–Off Time
Sorage Time
FallTime
I
C
= 10mA
I
C
= 10
μ
A
I
C
= 0
V
CE
= 30V
V
CB
= 50V
V
CB
= 50V
I
B
= 0
I
E
= 0
I
E
= 10
μ
A0
V
BE
= 0.5V
I
E
= 0
I
E
= 0
T
A
= 150
°
C
V
BE
= 0.5V
V
CE
= 30V
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 500mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
1
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
1
I
B
= 50mA
V
CE
= 20V
f = 100MHz
V
CB
= 10V
f = 100kHz
V
BE
= 2..0V
f = 100kHz
I
C
= 50mA
I
E
= 0
I
C
= 0
V
CC
= 30V
I
B1
= 15mA
I
C
= 150mA
V
CC
= 6V
I
B1
= I
B2
=15mA
I
C
= 150mA
V
nA
μ
A
nA
—
V
V
MHz
pF
ns
ns
40
60
5.0
50
0.02
20
50
20
25
35
20
0.4
1.6
1.3
2.6
200
8.0
30
26
6.0
20
70
50
20
45
10
40
100
80
30
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
2N2904
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300
μ
s ,Duty Cycle < 2%
2) f
t
is defined as the frequency at which |h
fe
| extrapolates to untity.
SWITCHING CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
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