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參數(shù)資料
| 型號(hào)： | 2N2904AL |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP SWITCHING SILICON TRANSISTOR |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 18K |
| 代理商： | 2N2904AL |
Parameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
Collector–Emitter Breakdown Voltage
1
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
B
Base Current
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE(sat)
Collector – Emitter Saturation Voltage
1
V
BE(sat)
Base – Emitter Saturation Voltage
f
t
Current Gain Bandwidth Product
2
C
obo
Output Capacitance
C
ibo
Input Capacitance
t
on
t
d
t
r
t
off
t
s
t
f
Turn–On Time
Delay Time
RiseTime
Turn–Off Time
Sorage Time
FallTime
I
C
= 10mA
I
C
= 10
μ
A
I
C
= 0
V
CE
= 30V
V
CB
= 50V
V
CB
= 50V
I
B
= 0
I
E
= 0
I
E
= 10
μ
A0
V
BE
= 0.5V
I
E
= 0
I
E
= 0
T
A
= 150
°
C
V
BE
= 0.5V
V
CE
= 30V
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 500mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
1
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
1
I
B
= 50mA
V
CE
= 20V
f = 100MHz
V
CB
= 10V
f = 100kHz
V
BE
= 2..0V
f = 100kHz
I
C
= 50mA
I
E
= 0
I
C
= 0
V
CC
= 30V
I
B1
= 15mA
I
C
= 150mA
V
CC
= 6V
I
B1
= I
B2
=15mA
I
C
= 150mA
V
nA
μ
A
nA
—
V
V
MHz
pF
ns
ns
40
60
5.0
50
0.02
20
50
20
25
35
20
0.4
1.6
1.3
2.6
200
8.0
30
26
6.0
20
70
50
20
45
10
40
100
80
30
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
2N2904
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300
μ
s ,Duty Cycle < 2%
2) f
t
is defined as the frequency at which |h
fe
| extrapolates to untity.
SWITCHING CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2904 | Chip Type 2C2904A Geometry 0600 Polarity PNP |
| 2N2904A | Chip Type 2C2904A Geometry 0600 Polarity PNP |
| 2N2904AUB | Chip Type 2C2904A Geometry 0600 Polarity PNP |
| 2N2905A | HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR |
| 2N2905A | High Speed, Saturated Switch PNP Silicon Transistor(高速、飽和開(kāi)關(guān)型PNP硅晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2904AUB | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Chip Type 2C2904A Geometry 0600 Polarity PNP |
| 2N2904CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
| 2N2904DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed |
| 2N2904E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 2N2904E_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:Laser Marking |
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