- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368997 > 2N2904 (SIEMENS AG) PNP SILICON PLANAR TRANSISTORS PDF資料下載
參數(shù)資料
| 型號： | 2N2904 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP SILICON PLANAR TRANSISTORS |
| 中文描述： | 進步黨硅平面型晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 18K |
| 代理商： | 2N2904 |
Parameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
Collector–Emitter Breakdown Voltage
1
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
B
Base Current
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE(sat)
Collector – Emitter Saturation Voltage
1
V
BE(sat)
Base – Emitter Saturation Voltage
f
t
Current Gain Bandwidth Product
2
C
obo
Output Capacitance
C
ibo
Input Capacitance
t
on
t
d
t
r
t
off
t
s
t
f
Turn–On Time
Delay Time
RiseTime
Turn–Off Time
Sorage Time
FallTime
I
C
= 10mA
I
C
= 10
μ
A
I
C
= 0
V
CE
= 30V
V
CB
= 50V
V
CB
= 50V
I
B
= 0
I
E
= 0
I
E
= 10
μ
A0
V
BE
= 0.5V
I
E
= 0
I
E
= 0
T
A
= 150
°
C
V
BE
= 0.5V
V
CE
= 30V
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 500mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
1
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
1
I
B
= 50mA
V
CE
= 20V
f = 100MHz
V
CB
= 10V
f = 100kHz
V
BE
= 2..0V
f = 100kHz
I
C
= 50mA
I
E
= 0
I
C
= 0
V
CC
= 30V
I
B1
= 15mA
I
C
= 150mA
V
CC
= 6V
I
B1
= I
B2
=15mA
I
C
= 150mA
V
nA
μ
A
nA
—
V
V
MHz
pF
ns
ns
40
60
5.0
50
0.02
20
50
20
25
35
20
0.4
1.6
1.3
2.6
200
8.0
30
26
6.0
20
70
50
20
45
10
40
100
80
30
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
2N2904
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300
μ
s ,Duty Cycle < 2%
2) f
t
is defined as the frequency at which |h
fe
| extrapolates to untity.
SWITCHING CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
相關PDF資料 |
PDF描述 |
|---|---|
| 2N2904 | PNP SWITCHING SILICON TRANSISTOR |
| 2N2904A | PNP SWITCHING SILICON TRANSISTOR |
| 2N2904AL | PNP SWITCHING SILICON TRANSISTOR |
| 2N2904 | Chip Type 2C2904A Geometry 0600 Polarity PNP |
| 2N2904A | Chip Type 2C2904A Geometry 0600 Polarity PNP |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2904 | 制造商:NTE Electronics 功能描述:SILICON PNP TRANSISTOR |
| 2N2904_09 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N2904_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SWITCHING SILICON TRANSISTOR |
| 2N2904A | 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2904A_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。