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參數(shù)資料
| 型號(hào)： | 2N2894DCSM |
| 英文描述： | High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開關(guān)型PNP晶體管（高可靠性、陶瓷表貼封裝）) |
| 中文描述： | 高速中功率開關(guān)晶體管進(jìn)步黨在全封閉六窯業(yè)表面貼裝封裝，高可靠性的應(yīng)用（高速，中等功率，開關(guān)型進(jìn)步黨晶體管（高可靠性，陶瓷表貼封裝）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 16K |
| 代理商： | 2N2894DCSM |
Parameter
Collector
–
Base Breakdown Voltage
Collector
–
Emitter Breakdown Voltage
Emitter
–
Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Test Conditions
I
C
= 10
m
A
I
C
= 10mA
I
E
= 10
m
A
V
CB
=
–
6V
V
BE
= 0
I
C
=
–
10mA
I
C
=
–
30mA
I
C
=
–
100mA
I
C
=
–
10mA
I
C
=
–
30mA
I
C
=
–
100mA
I
C
=
–
10mA
I
C
=
–
30mA
I
C
=
–
100mA
I
C
=
–
30mA
Min.
–
12
–
12
–
4
Typ.
Max.
Unit
V
nA
V
V
–—
MHz
pF
pF
ns
ns
–
10
–
80
–
0.15
–
0.20
–
0.50
–
0.98
–
1.2.
–
1.7
–
0.78
–
0.85
30
40
25
150
17
400
6
6
60
9
I
E
= 0
I
B
= 0
I
C
= 0
T
amb
= 125
°
C
V
CE
=
–
6V
I
B
=
–
1mA
I
B
=
–
3mA
I
B
=
–
10mA
I
B
=
–
1mA
I
B
=
–
3mA
I
B
=
–
10mA
V
CE
=
–
0.3V
V
CE
=
–
0.5V
V
CE
=
–
1V
V
CE
=
–
0.5V
T
amb
= 125
°
C
f = 100MHz
V
CE
=
–
10V
I
C
=
–
30mA
V
EB
=
–
5V
f = 1MHz
V
CB
=
–
5V
f = 1MHz
I
C
=
–
30mA
I
B2
=
–
1.5mA
I
C
=
–
30mA
I
B1
= I
B2
=
–
1.5mA
I
C
= 0
I
C
= 0
V
CE
=
–
2V
V
CE
=
–
2V
2N2894DCSM
Prelim. 8/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS
(TA= 25
°
C unless otherwise stated)
V
(BR)CBO*
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
V
CE(sat)
Collector
–
Emitter Saturation Voltage
V
BE(sat)
Base
–
Emitter On Voltage
h
FE
DC Current Gain
f
T
Current Gain Bandwidth Product
C
ebo
Emitter
–
Base
–
Capacitance
C
cbo
Collector
–
Base
–
Capacitance
t
on
Turn on Time
t
off
Turn off Time
* Pulse Test: t
p
￡
300
m
s,
d ￡
2%.
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