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參數(shù)資料
| 型號(hào)： | 2N2857JX |
| 廠商： | SEMICOA CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 |
| 封裝： | HERMETIC SEALED, METAL CAN-4 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 467K |
| 代理商： | 2N2857JX |
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N2857
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 3 mA
15
Volts
Collector-Base Cutoff Current
ICBO1
VCB = 15 Volts
10
nA
Collector-Base Cutoff Current
ICBO3
VCB = 30 Volts
1
A
Collector-Base Cutoff Current
ICBO2
VCB = 15 Volts, TA = 150°C
1
A
Collector-Emitter Cutoff Current
ICES
VCE = 16 Volts
100
nA
Emitter-Base Cutoff Current
IEBO1
VEB = 3 Volts
10
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
IC = 3 mA, VCE = 1 Volts
TA = -55°C
30
10
150
Base-Emitter Saturation Voltage
VBEsat
IC = 10 mA, IB = 1 mA
1.0
Volts
Collector-Emitter Saturation Voltage
VCEsat
IC = 10 mA, IB = 1 mA
0.4
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 6 Volts, IC = 5 mA,
f = 100 MHz
10
21
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 6 Volts, IC = 2 mA,
f = 1 kHz
50
220
Collector to Base Feedback
Capacitance
CCB
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
1
pF
Collector Base time constant
rb’CC
VCB = 6 Volts, IE = 2 mA,
f = 31.9 MHz
4
15
ps
Small Signal Power Gain
Gpe
VCE = 6 Volts, IE = 1.5 mA,
f = 450 MHz
12.5
21
MHz
Noise Figure
F
VCE = 6 Volts, IC = 1.5 mA,
f < 450 MHz, Rg = 50
4.5
dB
Semicoa Corporation
Copyright
2010
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