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參數(shù)資料
| 型號： | 2N2369 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Switching Transistors |
| 中文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 封裝： | TO-18, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | 2N2369 |
2N2369A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5277
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and
reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
datasheets are current before placing orders.
Test Conditions
I
C
= 10mA
I
C
= 10
μ
A
I
E
= 10
μ
A
V
CE
= 20V
V
CB
= 20V
I
C
= 10mA
Min.
15
40
4.5
Typ.
Max.
T
A
= +150°C
I
B
= 1mA
T
A
= +125°C
I
B
= 3mA
I
B
= 10mA
I
B
= 1mA
I
B
= 3mA
I
B
= 10mA
I
B
= 1mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
T
A
= -55°C to +125°C
I
C
= 10mA
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
I
C
= 10mA
V
CE
= 0.35V
V
CE
= 1V
V
CE
= 0.40V
V
CE
= 1V
V
CE
= 0.35V
T
A
= –55°C
V
CE
= 10V
I
C
= 10mA
f = 100MHz
I
E
= 0
f = 1MHz
I
C
= 10mA
I
B1
= –I
B2
= 10mA
I
C
= 10mA
I
B1
= 3mA
V
CB
= 5V
V
CC
= 10V
V
CC
= 3V
I
B2
= –1.5mA
ELECTRICAL CHARACTERISTICS
(TA= 25°C unless otherwise stated)
V
(BR)CEO*
V
(BR)CBO
V
(BR)EBO
I
CES
I
CBO
V
CE(sat)*
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Emitter Cut-off Current
Collector – Base Cut-off Current
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
f
T
Transition Frequency
C
cbo
Output Capacitance
t
s
Storage Time
t
on
t
off
Turn–On Time
Turn–Off Time
0.40
30
0.20
0.30
0.25
0.5
0.85
1.15
1.6
0.70
0.8
0.9
1.1
0.59
1.02
40
40
30
20
120
120
71
20
50
500
675
2.3
4
6
13
9
13
12
18
V
V
V
μ
A
μ
A
V
V
—
MHz
pF
ns
ns
* Pulse Test: t
p
≤
300
μ
s,
δ ≤
2%.
Parameter
Unit
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| 2N2369ACSM | HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2369 WAF | 制造商:ON Semiconductor 功能描述: |
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| 2N2369A | 功能描述:兩極晶體管 - BJT NPN Fast SW SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2369A_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor |
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