參數(shù)資料
型號(hào): 2N2222AL
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 小信號(hào)晶體管
英文描述: NPN SILICON SWITCHING TRANSISTOR
中文描述: 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
封裝: SIMILAR TO TO-18, 3 PIN
文件頁數(shù): 2/2頁
文件大小: 14K
代理商: 2N2222AL
Parameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
f
T
C
ob
C
ib
Transition Frequency
2
Output Capacitance
Input Capacitance
hfe
Small Signal Current Gain
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
I
C
= 20mA
V
CB
= 10V
V
EB
= 0.5V
I
C
= 1mA
I
C
= 10mA
V
CE
= 20V
I
E
= 0
I
C
= 0
V
CE
= 10V
V
CE
= 10V
f = 100MHz
f = 100kHz
f = 100kHz
f = 1kHz
f = 1kHz
V
CC
= 30V
I
C
= 150mA
V
CC
= 30V
V
BE(off)
= 0.5V
I
B1
= 15mA
I
C
= 150mA
I
B1
= I
B2
= 15mA
LA B
S E M E
2N2222A
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/96
I
C
= 10mA
I
C
= 10
μ
A
I
E
= 10
μ
A
V
CE
= 60V
I
E
= 0
I
B
= 0
I
E
= 0
I
C
= 0
V
EB(off)
= 3V
V
CB
= 60V
T
A
= 150°C
V
EB
= 3V
V
EB(off)
= 3V
I
C
= 0
V
CE
= 60V
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
B
= 15mA
I
B
= 50mA
I
B
= 15mA
I
C
= 50mA
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
T
A
= –55°C
V
CE
= 10V
1
V
CE
= 1V
1
V
CE
= 10V
1
I
C
= 150mA
I
C
= 150mA
I
C
= 500mA
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
I
CBO
Collector – Base Cut-off Current
I
EBO
I
BL
Emitter Cut-off Current (I
C
= 0)
Base Current
V
CE(sat)
1
Collector – Emitter Saturation Voltage
V
BE(sat)
1
Base – Emitter Saturation Voltage
h
FE
DC Current Gain
40
75
6
10
0.01
10
10
20
0.3
1
1.2
2
0.6
35
50
75
35
100
50
40
300
300
8
25
300
375
50
75
10
25
225
60
V
V
V
nA
μ
A
nA
nA
V
V
MHz
pF
ns
ns
NOTES:
1) Pulse test: t
p
300
μ
s ,
δ ≤
2%
2) f
T
is defined as the frequency at which h
FE
extrapolates to unity.
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
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