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參數(shù)資料
| 型號： | 2N2219AHR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 155K |
| 代理商： | 2N2219AHR |
2N2219AHR
Electrical characteristics
Doc ID 15294 Rev 2
3/8
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off
current (IE = 0)
VCB = 60 V
Tamb = 150 °C
10
nA
A
IEBO
Emitter cut-off current
(IC = 0)
VEB = 3 V
10
nA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 10 A
75
V
V(BR)CEO
(1)
1.
Pulsed duration = 300 s, duty cycle
≤ 2%
Collector-emitter
breakdown voltage
(IB = 0)
IC = 10 mA
40
V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 10 A
6
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 150 mA
IB = 15 mA
IC = 500 mA
IB = 50 mA
0.3
1
V
VBE(sat)
(1)
Base-emitter
saturation voltage
IC = 150 mA
IB = 15 mA
1.2
V
hFE
(1)
DC current gain
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 500 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
Tamb = -55 °C
75
100
40
35
300
hfe
Small signal current
gain
VCE = 20 V
IC = 20 mA
f = 100 MHz
2.5
CCBO
Output capacitance
(IE = 0)
VCB = 10 V
100 kHz
≤ f ≤ 1 MHz
8pF
ton
Turn-on time
VCC = 30 V
IC = 150 mA
IB1 = 15 mA
35
ns
toff
Turn-off time
VCC = 30 V
IC = 150 mA
IB1 = -IB2 = 15 mA
300
ns
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2219AJ | 制造商:Diodes Incorporated 功能描述: 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N2219AJAN | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin TO-39 |
| 2N2219AJANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin TO-39 |
| 2N2219AJANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR TO-39 LAW |
| 2N2219AJANTXV | 制造商:ON Semiconductor 功能描述: 制造商:Microsemi Corporation 功能描述: |
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