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參數(shù)資料
| 型號(hào)： | 2N2060JV |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon NPN Transistor |
| 中文描述： | 硅NPN晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 210K |
| 代理商： | 2N2060JV |
Copyright
2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 1 of 1
2N2060
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N2060J)
JANTX level (2N2060JX)
JANTXV level (2N2060JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.
SEMICOA
.com or (714) 979-1900
Applications
Matched, Dual Transistors
Low power
NPN silicon transistor
Features
Hermetically sealed TO-77 metal can
Also available in chip configuration
Chip geometry 0410
Reference document:
MIL-PRF-19500/270
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
T
C
= 25
°
C unless otherwise specified
Rating
60
100
7
500
540 one section
600 both sections
3.08 one section
3.48 both sections
1.5 one section
2.12 both sections
8.6 one section
12.1 both sections
Absolute Maximum Ratings
Parameter
Symbol
V
CEO
V
CBO
V
EBO
I
C
Unit
Volts
Volts
Volts
mA
mW
mW
mW/
°
C
mW/
°
C
W
W
mW/
°
C
mW/
°
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
°
C
Derate linearly above 25
°
C
P
T
Power Dissipation, T
C
= 25
°
C
Derate linearly above 25
°
C
P
T
Operating Junction Temperature
Storage Temperature
T
J
T
STG
-65 to +200
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N2060JX | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor |
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| 2N2060LJ | 制造商: 功能描述: |
| 2N2060LJAN | 制造商: 功能描述: |
| 2N2060M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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