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| 型號： | 2N2060A |
| 英文描述： | Dual Amplifier Transistor（Small Signal Dual Transistor in a TO-77 Hermetic Package）(具有放大器功能的雙晶體管（TO-77封裝兩個小信號晶體管）) |
| 中文描述： | 雙放大器晶體管（雙小信號晶體管采用TO - 77氣密封裝）（具有放大器功能的雙晶體管（至77封裝兩個小信號晶體管）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 19K |
| 代理商： | 2N2060A |
Prelim. 4/96
LA B
S E M E
2N2060A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
I
C
= 100mA
I
C
= 30mA
I
C
= 100
m
A
I
E
= 100
m
A
V
CB
= 80V
I
E
= 0
V
BE
= 5V
R
BE
￡
10
W
I
B
= 0
I
E
= 0
I
C
= 0
T
A
= 150°C
I
C
= 0
I
C
= 10
m
A
I
C
= 100
m
A
I
C
= 1mA
I
C
= 10mA
I
C
= 50mA
I
C
= 50mA
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
I
B
= 5mA
I
B
= 5mA
I
C
= 50mA
f = 20MHz
I
E
= 0
f = 1MHz
I
C
= 0
f = 1MHz
I
C
= 1mA
f = 1kHz
I
C
= 1mA
f = 1kHz
I
C
= 1mA
f = 1kHz
V
CE
= 10V
V
CB
= 10V
V
BE
= 0.5V
V
CE
= 5V
V
CB
= 10V
V
CE
= 5V
I
C
= 100
m
A
I
C
= 1mA
I
C
= 100
m
A
I
C
= 1mA
I
C
= 100
m
A
T
A
= –55 to +125°C
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
ELECTRICAL CHARACTERISTICS
(TA= 25°C unless otherwise stated)
V
CER(sus)*
V
CEO(sus)*
V
(BR)CBO
V
(BR)EBO
Collector – Emitter Breakdown Voltage
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
CE(sat)
V
BE(sat)
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
Input Impedance
h
ib
Input Impedance
h
fe
h
oe
Small Signal Current Gain
Output Admittance
h
FE1
/h
FE2
DC Current Gain Ratio
1
V
BE1
-V
BE2
Base – Emitter Voltage Differential
D(
V
BE1
-V
BE2
) Base – Emitter Voltage Differential
D
T
Change Due To Temperature
80
60
100
7
0.002
10
2.0
25
30
40
50
75
90
120
150
0.6
0.9
60
15
85
1000
4000
20
30
50
150
16
0.9
0.9
1.0
1.0
3.0
5.0
5.0
V
V
V
V
m
A
nA
—
V
MHz
pF
pF
W
W
—
m
mhos
—
mV
m
V/°C
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
MATCHING CHARACTERISTICS
*
1) The lowest h
FE
reading is taken as h
FE1
for this ratio.
Pulse Test: t
p
￡
300
m
s,
d ￡
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2060 | Silicon NPN Transistor |
| 2N2060 | Dual Transistors |
| 2N2060A | Dual Transistors |
| 2N2060 | UNITIZED DUAL NPN SILICON TRANSISTOR |
| 2N2060L | UNITIZED DUAL NPN SILICON TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2060ADCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed |
| 2N2060B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 60V V(BR)CEO | 500MA I(C) | TO-77 |
| 2N2060DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed |
| 2N2060J | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N2060JANTXV | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 |
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