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參數(shù)資料
| 型號(hào)： | 28LV011RT4FB-20 |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類(lèi)： | PROM |
| 英文描述： | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 中文描述： | 128K X 8 EEPROM 3V, 200 ns, DFP32 |
| 封裝： | LDFP-32 |
| 文件頁(yè)數(shù)： | 1/19頁(yè) |
| 文件大小： | 305K |
| 代理商： | 28LV011RT4FB-20 |
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1
M
All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301- wwwmaxwell.com
3.3V 1 Megabit (128K x 8-Bit)
28LV011
2002 Maxwell Technologies
All rights reserved.
EEPROM
05.28.02 Rev 2
F
EATURES
:
3.3V low voltage operation 128K x 8 Bit EEPROM
R
AD
-P
AK
radiation-hardened against natural space
radiation
Total dose hardness:
- > 100 krad (Si), depending upon space mssion
Excellent Single Event Effects:
- SEL
TH
> 84 MeV/mg/cm
2
- SEU
TH
> 37 Mev/mg/cm
2
(read mode)
- SEU saturated cross section = 3E-6 cm
2
(read mode)
- SEU
TH
= 11.4 Mev/mg/cm
2
(write mode)
- SEU saturated cross section = 5E-3 cm
2
(write mode)
with hard errors
Package:
- 32 Pin R
AD
-P
AK
flat pack
- 32 Pin R
AD
-P
AK
DIP
- JEDEC-approved byte-wide pinout
Address Access Time:
- 200, 250 ns Access times available
High endurance:
- 10,000 erase/write (in Page Mode), 10-year data
retention
Page write mode:
- 1 to 128 bytes
Automatic programmng
- 15 ms automatic page/byte write
Low power dissipation
- 20 mW/MHz active current (typ.)
- 72 μW standby (maximum
D
ESCRIPTION
:
Maxwell Technologies’ 28LV011 high density, 3.3V, 1 Megabit
EEPROMmcrocircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mssion. The
28LV011 is capable of in-systemelectrical Byte and Page pro-
grammability. It has a 128-Byte Page Programmng function to
make its erase and write operations faster. It also features
Data Polling and a Ready/Busy signal to indicate the comple-
tion of erase and programmng operations. In the 28LV011,
hardware data protection is provided with the RES pin, in addi-
tion to noise protection on the WE signal and write inhibit on
power on and off. Meanwhile, software data protection is
implemented using the JEDEC-optional Standard algorithm
The 28LV011 is designed for high reliability in the most
demanding space applications.
Maxwell Technologies' patented R
AD
-P
AK
packaging technol-
ogy incorporates radiation shielding in the mcrocircuit pack-
age. It elimnates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mssion. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
Note:The recommended formof data protection during power
on/off is to hold the RES pin to V
SS
during power up and power
down. This may be accompanied by connecting the RES pin
to the CPU reset line. Failure to provide adequate protection
during power on/off may result in lost or modified data.
High Voltage
Generator
C ontrol Logic Timing
Address
Buffer and
Latch
Y Decoder
X Decoder
Y Gating
Memory Array
I/O Buffer and
Input Latch
Data Latch
V
C C
V
SS
RES
OE
C E
WE
RES
A0
A6
A7
A16
I/O0
I/O7
RDY/Busy
Logic Diagram
28LV011
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28LV011RT1FB-20 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV011RT1FB-25 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV011RT1FE-20 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV011RT1FE-25 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV011RT1FI-20 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28LV011RT4FB-25 | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV011RT4FE-20 | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV011RT4FE-25 | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV011RT4FI-20 | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV011RT4FI-25 | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
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