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參數(shù)資料
| 型號(hào)： | 28LV010RT1DI-25 |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | PROM |
| 英文描述： | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 中文描述： | 128K X 8 EEPROM 3V, 250 ns, DIP32 |
| 封裝： | DIP-32 |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大小： | 363K |
| 代理商： | 28LV010RT1DI-25 |
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5
Alldatasheetsaresubjecttochangewithoutnotice
2001MaxwellTechnologies
Allrightsreserved.
3.3V 1Megabit(128K x8-Bit)EEPROM
28LV010
03.14.03REV 6
T
ABLE
8.28LV010AC E
LECTRICAL
C
HARACTERISTICS FOR
E
RASE AND
W
RITE
O
PERATIONS
(V
CC
=3.3V ± 10%, T
A
=-55
TO
+125°C
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
AddressSetupTime
-200
-250
t
AS
9, 10, 11
0
0
--
--
ns
ChipEnabletoWriteSetupTime (WE controlled)
-200
-250
t
CS
9, 10, 11
0
0
--
--
ns
WritePulseWidth(CE controlled)
-200
-250
t
CW
9, 10, 11
200
250
--
--
ns
WritePulseWidth(WE controlled)
-200
-250
t
WP
9, 10, 11
200
250
--
--
ns
AddressHoldTime
-200
-250
t
AH
9, 10, 11
125
150
--
--
ns
DataSetupTime
-200
-250
t
DS
9, 10, 11
100
100
--
--
ns
DataHoldTime
-200
-250
t
DH
9, 10, 11
10
10
--
--
ns
ChipEnableHoldTime(WE controlled)
-200
-250
t
CH
9, 10, 11
0
0
--
--
ns
WriteEnabletoWriteSetupTime(CE controlled)
-200
-250
t
WS
9, 10, 11
0
0
--
--
ns
WriteEnableHoldTime(CE controlled)
-200
-250
t
WH
9, 10, 11
0
0
--
--
ns
OutputEnabletoWriteSetupTim
-200
-250
t
OES
9, 10, 11
0
0
--
--
ns
OutputEnableHoldTime
-200
-250
t
OEH
9, 10, 11
0
0
--
--
ns
WriteCycleTime
1,2
-200
-250
t
WC
9, 10, 11
--
--
15
15
ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28LV010RT1DI20 | CAPACITOR ARRAY, 0508, 2X470PF, 50V; Application:Standard; Capacitance:0.47nF; Tolerance, capacitance:+/-10%; Series:W2A; Voltage, rating:50V; Capacitor dielectric type:Ceramic Multi-Layer; Case style:0508; Dielectric RoHS Compliant: Yes |
| 28LV010RT1DI25 | CAP ARRAY, 2 X 1000PF 50V 0508X7RCAP ARRAY, 2 X 1000PF 50V 0508X7R; CAPACITANCE:1NF; VOLTAGE RATING, DC:50V; CAPACITOR DIELECTRIC TYPE:CERAMIC MULTI-LAYER; SERIES:W2A; TOLERANCE, :10%; TOLERANCE, -:10%; TEMP, OP. MAX:125(DEGREE C); RoHS Compliant: Yes |
| 28LV010RT1DS-20 | CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, +:10%; Tolerance, -:10%; Temp, op. max:125(degree C); |
| 28LV010RT1DS-25 | CAP ARRAY, 2 X 100NF 16V 0508X7RCAP ARRAY, 2 X 100NF 16V 0508X7R; CAPACITANCE:100NF; VOLTAGE RATING, DC:16V; CAPACITOR DIELECTRIC TYPE:CERAMIC MULTI-LAYER; SERIES:W2A; TOLERANCE, :10%; TOLERANCE, -:10%; TEMP, OP. MAX:125(DEGREE C); RoHS Compliant: Yes |
| 28LV010RT1DS20 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28LV010RT1DS20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DS-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DS25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DS-25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1FB20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
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