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參數(shù)資料
| 型號： | 27H010 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 128K x 8 High-Speed CMOS EPROM |
| 中文描述： | 128K的× 8高速CMOS存儲器 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 212K |
| 代理商： | 27H010 |
CY27H010
4
Erasure Characteristics
Wavelengths of light less than 4000 Angstroms begin to erase
the CY27H010 in the windowed package. For this reason, an
opaque label should be placed over the window if the EPROM
is exposed to sunlight or fluorescent lighting for extended pe-
riods of time.
The recommended dose of ultraviolet light for erasure is a
wavelength of 2537 Angstroms for a minimum dose (UV inten-
sity multiplied by exposure time) of 25 Wsec/cm2. For an ul-
traviolet lamp with a 12 mW/cm
2
power rating, the exposure
time would be approximately 35 minutes. The CY27H010
needs to be within 1 inch of the lamp during erasure. Perma-
nent damage may result if the EPROM is exposed to high-in-
tensity UV light for an extended period of time. 7258 Wsec/cm
2
is the recommended maximum dosage.
Programming Modes
Programming support is available from Cypress as well as
from a number of third-party software vendors. For detailed
programming information, including a listing of software pack-
ages, please see the PROM Programming Information located
at the end of this section. Programming algorithms can be ob-
tained from any Cypress representative.
t
CE
t
HZCE
t
PU
t
PD
t
OH
CE Active to Output Valid
CE Inactive to High Z
CE Active to Power-Up
CE Inactive to Power-Down
Output Data Hold
30
12
30
20
40
20
ns
ns
ns
ns
ns
0
0
0
30
35
40
0
0
0
Switching Characteristics
Over the Operating Range (continued)
27H010–25
Min.
27H010–30
Min.
27H010–35
Min.
Parameter
Description
Max.
Max.
Max.
Unit
Switching Waveform
H010–7
t
PU
t
CE
t
AA
t
PD
CE
O
0
– O
7
A
0
– A
16
OE
I
CC
ADDR A
ADDR B
t
AA
DATA A
DATA B
DATA B
t
HZOE
t
OE
t
HZCE
t
OH
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