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參數(shù)資料
| 型號： | 24LCS61/ST |
| 元件分類： | PROM |
| 英文描述： | 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 |
| 封裝： | TSSOP-8 |
| 文件頁數(shù)： | 2/17頁 |
| 文件大?。?/td> | 249K |
| 代理商： | 24LCS61/ST |
24LCS61/62
DS21226C-page 10
Preliminary
1999 Microchip Technology Inc.
6.0
WRITE OPERATIONS
6.1
Byte Write
Following the start signal from the master, the control
byte for a write command is sent by the master trans-
mitter. The device will acknowledge this control byte
during the ninth clock pulse. The next byte transmitted
by the master is the ID byte for the device. After receiv-
ing another acknowledge signal from the 24LCS61/62,
the master device will transmit the address and then
the data word to be written into the addressed memory
location. The 24LCS61/62 acknowledges between
each byte, and the master then generates a stop con-
dition. This initiates the internal write cycle, and during
this time the 24LCS61/62 will not generate acknowl-
edge signals (Figure 6-1).
6.2
Page Write
The control byte, ID byte, word address, and the first
data byte are transmitted to the 24LCS61/62 in the
same way as in a byte write. But, instead of generating
a stop condition, the master transmits up to 15 addi-
tional data bytes to the 24LCS61/62, which are tempo-
rarily stored in the on-chip page buffer and will be
written into the memory after the master has transmit-
ted a stop condition. If the master should transmit more
than 16 bytes prior to generating the stop condition, the
address counter will roll over and the previously
received data will be overwritten. As with the byte write
operation, once the stop condition is received an inter-
nal write cycle will begin (Figure 6-2) and the 24LCS61/
62 will not generate acknowledge.
6.3
Low Voltage Write Protection
The 24LCS61/62 employs a VCC threshold detector cir-
cuit which disables the internal erase/write logic, if the
VCC is below 1.5 volts at nominal conditions.
6.4
Set Write Protection Command
The Set Write Protection command allows the user to
write protect a portion of the array. For the 24LCS61
this command will write protect the entire array. For the
24LCS62 this command will protect the lower half of the
array. This command is illustrated in Figure 6-3. This is
a one time only command and cannot be reversed
once the protection fuse has been set. Once the
Write protect feature has been set, the device will no
longer acknowledge the control byte (or any of the
other bytes) of this command. The STOP bit of this
command initiates an internal write cycle, and during
this time the 24LCS61/62 will not generate acknowl-
edge signals.
FIGURE 6-1:
BYTE WRITE
Note:
Page write operations are limited to writing
bytes within a single physical page, regard-
less of the number of bytes actually being
written. Physical page boundaries start at
addresses that are integer multiples of the
page buffer size (or ‘page size’) and end at
addresses that are integer multiples of
[page size - 1]. If a page write command
attempts to write across a physical page
boundary, the result is that the data wraps
around to the beginning of the current page
(overwriting data previously stored there),
instead of being written to the next page as
might be expected. It is therefore neces-
sary for the application software to prevent
page write operations that would attempt to
cross a page boundary.
S
T
A
R
T
S
T
O
P
DEVICE
ID BYTE
DATA
CONTROL
BYTE
A
C
K
A
C
K
A
C
K
BUS ACTIVITY
MASTER
SDA LINE
BUS ACTIVITY
A
C
K
ADDRESS
BYTE
1
01 0 O 01 0
S
E
OE Bit = EDS Pin Output Enable; see Section 9.0
P
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 24LCS61T/SN | 功能描述:電可擦除可編程只讀存儲(chǔ)器 128x8 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24LCS61T/ST | 功能描述:電可擦除可編程只讀存儲(chǔ)器 128x8 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24LCS61T-I/SN | 功能描述:電可擦除可編程只讀存儲(chǔ)器 128x8 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24LCS61T-I/ST | 功能描述:電可擦除可編程只讀存儲(chǔ)器 128x8 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24LCS62/P | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256x8 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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