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參數(shù)資料
| 型號： | 24AA65 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 64K 1.8V I 2 C O Smart Serial O EEPROM |
| 中文描述： | 64K的1.8VI 2二氧化碳?串行EEPROM的智能 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 105K |
| 代理商： | 24AA65 |
1996 Microchip Technology Inc.
DS21056F-page 11
24AA65
FIGURE 8-2:
CACHE WRITE TO THE ARRAY STARTING AT A PAGE BOUNDARY
FIGURE 8-3:
CACHE WRITE TO THE ARRAY STARTING AT A NON-PAGE BOUNDARY
1 Write command initiated at byte 0 of page 3 in the array;
First data byte is loaded into the cache byte 0.
2 64 bytes of data are loaded into cache.
3 Write from cache into array initiated by STOP bit.
Page 0 of cache written to page 3 of array.
Write cycle is executed after every page is written.
4 Remaining pages in cache are written
to sequential pages in array.
cache
byte 0
cache
byte 1
cache
byte 7
cache page 1
bytes 8-15
page 0
cache page 2
bytes 16-23
cache page 7
bytes 56-63
page 1 page 2
byte 7
page 4
page 7
page 3
cache page 0
Last page in cache written to page 2 in next row.
5
array row n
array row n + 1
page 0 page 1 page 2
byte 0
byte 1
page 4
page 7
1 Write command initiated; 64 bytes of data
loaded into cache starting at byte 2 of page 0.
2 Last 2 bytes loaded 'roll over'
to beginning.
3
Last 2 bytes
loaded into
page 0 of cache.
4 Write from cache into array initiated by STOP bit.
Page 0 of cache written to page 3 of array.
Write cycle is executed after every page is written.
cache
byte 1
cache
byte 2
cache
byte 7
cache page 1
bytes 8-15
page 0
cache page 2
bytes 16-23
cache page 7
bytes 56-63
page 1 page 2
page 4
page 7
page 3
Remaining bytes in cache are
written sequentially to array.
5
array
row n
array
row
n + 1
cache
byte 0
Last 3 pages in cache written to next row in array.
6
page 1 page 2
byte 0
byte 2
byte 1
page 4
page 7
byte 7
byte 3
byte 4
page 0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 24AA65-P | 64K 1.8V I 2 C O Smart Serial O EEPROM |
| 24AA65-SM | 64K 1.8V I 2 C O Smart Serial O EEPROM |
| 24C040-IP | 4K SPI ⑩ Bus Serial EEPROM |
| 24C040-ISN | 4K SPI ⑩ Bus Serial EEPROM |
| 24C040-IST | 4K SPI ⑩ Bus Serial EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 24AA65/P | 功能描述:電可擦除可編程只讀存儲器 8kx8 1.8V Smart RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24AA65/PG | 功能描述:電可擦除可編程只讀存儲器 256x8 - 1.8V Smart Lead Free Package RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24AA65/SM | 功能描述:電可擦除可編程只讀存儲器 8kx8 1.8V Smart RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24AA65/SMG | 功能描述:電可擦除可編程只讀存儲器 256x8 - 1.8V Smart Lead Free Package RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24AA65SM | 制造商:MIC 功能描述:MICROCHIP 2000 S1I2A 制造商:MICHIP 功能描述: |
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