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參數(shù)資料
| 型號： | 1P1G3157QDBVRQ1 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 多路復(fù)用及模擬開關(guān) |
| 英文描述： | 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6 |
| 封裝： | ROHS COMPLIANT, PLASTIC, SOT-23, 6 PIN |
| 文件頁數(shù)： | 12/17頁 |
| 文件大?。?/td> | 449K |
| 代理商： | 1P1G3157QDBVRQ1 |
Electrical Characteristics
SCES463E – JUNE 2003 – REVISED APRIL 2008 ............................................................................................................................................................ www.ti.com
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN TYP(1)
MAX
UNIT
VI
IO = 4 mA
11
20
1.65 V
VI = 1.65 V,
IO = –4 mA
15
50
VI = 0 V,
IO = 8 mA
8
12
2.3 V
VI = 2.3 V,
IO = –8 mA
11
30
See Figure 1
ron
On-state switch resistance(2)
VI = 0 V,
IO = 24 mA
7
9.5
and Figure 2
3 V
VI = 3 V,
IO = –24 mA
9
20
VI = 0 V,
IO = 30 mA
6
7.5
VI = 2.4 V,
IO = –30 mA
4.5 V
7
12
VI = 4.5 ,
IO = –30 mA
7
15
IA = –4 mA
1.65 V
140
IA = –8 mA
2.3 V
45
On-state switch resistance
0
≤ VBn ≤ VCC
rrange
over signal range(2)(3)
IA = –24 mA
3 V
18
IA = –30 mA
4.5 V
10
VBn = 1.15 V, IA = –4 mA
1.65 V
0.5
Difference in on-state
VBn = 1.6 V,
IA = –8 mA
2.3 V
0.1
Δron
resistance between
See Figure 1
VBn = 2.1 V,
IA = –24 mA
3 V
0.1
switches(2)(4)(5)
VBn = 3.15 V, IA = –30 mA
4.5 V
0.1
IA = –4 mA
1.65 V
110
IA = –8 mA
2.3 V
26
On-state resistance
ron(flat)
0
≤ VBn ≤ VCC
flatness(2)(4)(6)
IA = –24 mA
3 V
9
IA = –30 mA
4.5 V
4
±1
1.65 V
Ioff
(7)
Off-state switch leakage current
0
A
to 5.5 V
±0.05
±1(1)
±1
IS(on)
On-state switch leakage current
5.5 V
A
±0.1(1)
±1
0 V
IIN
Control input current
0
≤ VIN ≤ VCC
A
to 5.5 V
±0.05
±1(1)
ICC
Supply current
VIN = VCC or GND
5.5 V
1
10
A
ΔICC
Supply-current change
VIN = VCC – 0.6 V
5.5 V
500
A
Control input
Cin
S
5 V
2.7
pF
capacitance
Switch input/output
Cio(off)
Bn
5 V
5.2
pF
capacitance
Bn
17.3
Switch input/output
Cio(on)
5 V
pF
capacitance
A
17.3
(1)
TA = 25°C
(2)
Measured by the voltage drop between I/O pins at the indicated current through the switch. On-state resistance is determined by the
lower of the voltages on the two (A or B) ports.
(3)
Specified by design
(4)
Δron = ron(max) – ron(min) measured at identical VCC, temperature, and voltage levels
(5)
This parameter is characterized, but not tested in production.
(6)
Flatness is defined as the difference between the maximum and minimum values of on-state resistance over the specified range of
conditions.
(7)
Ioff is the same as IS(off) (off-state switch leakage current).
4
Copyright 2003–2008, Texas Instruments Incorporated
Product Folder Link(s): SN74LVC1G3157-Q1
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