參數(shù)資料
型號(hào)： 1N6387
廠商： MOTOROLA INC
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝： PLASTIC, CASE 41A-02, 2 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 56K
代理商： 1N6387
Motorola TVS/Zener Device Data
4-2
500 Watt Peak Power Data Sheet
*ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF# = 3.5 V Max, IF** = 100 A) (C suffix denotes standard
ELECTRICAL CHARACTERISTICS back to back bidirectional versions. Test both polarities)
JEDEC
Breakdown
{{
Maximum
Mi
Maximum
Reverse
Voltage
Clamping Voltage
JEDEC
Breakdown
{{
Voltage
Maximum
Reverse
Maximum
Reverse
Voltage
@ IRSM{
Peak Pulse
JEDEC
Device
Note 1
Device
Note 1
VBR
Volts
Min
@ IT
(mA)
Reverse
Stand-Off
Voltage
VRWM***
(Volts)
Maximum
Reverse
Leakage
@ VRWM
IR (A)
Reverse
Surge
Current
IRSM{
(Amps)
@ IRSM{
(Clamping
Voltage)
VRSM
(Volts)
Peak Pulse
Current @
Ipp1{ = 1 A
VC1
(Volts max)
Peak Pulse
Current @
Ipp1{ = 10 A
VC2
(Volts max)
1N6373
ICTE-5/MPTE-5
6
1
5
300
160
9.4
7.1
7.5
1N6374
ICTE-8/MPTE-8
9.4
1
8
25
100
15
11.3
11.5
1N6382
ICTE-8C/MPTE-8C
9.4
1
8
25
100
15
11.4
11.6
1N6375
ICTE-10/MPTE-10
11.7
1
10
2
90
16.7
13.7
14.1
1N6383
ICTE-10C/MPTE-10C
11.7
1
10
2
90
16.7
14.1
14.5
1N6376
ICTE-12/MPTE-12
14.1
1
12
2
70
21.2
16.1
16.5
1N6384
ICTE-12C/MPTE-12C
14.1
1
12
2
70
21.2
16.7
17.1
1N6377
ICTE-15/MPTE-15
17.6
1
15
2
60
25
20.1
20.6
1N6385
ICTE-15C/MPTE-15C
17.6
1
15
2
60
25
20.8
21.4
1N6378
ICTE-18/MPTE-18
21.2
1
18
2
50
30
24.2
25.2
1N6386
ICTE-18C/MPTE-18C
21.2
1
18
2
50
30
24.8
25.5
1N6379
ICTE-22/MPTE-22
25.9
1
22
2
40
37.5
29.8
32
1N6387
ICTE-22C/MPTE-22C
25.9
1
22
2
40
37.5
30.8
32
1N6380
ICTE-36/MPTE-36
42.4
1
36
2
23
65.2
50.6
54.3
1N6388
ICTE-36C/MPTE-36C
42.4
1
36
2
23
65.2
50.6
54.3
1N6381
ICTE-45/MPTE-45
52.9
1
45
2
19
78.9
63.3
70
1N6389
ICTE-45C/MPTE-45C
52.9
1
45
2
19
78.9
63.3
70
NOTE 1: C suffix denotes standard back-to-back bidirectional versions. Test both polarities. JEDEC device types 1N6382 thru 1N6389 are registered as back to back bidirectional versions and
do not require a C suffix. 1N6373 thru 1N6381 are registered as unidirectional devices only (no bidirectional option).
*** Indicates JEDEC registered data.
*** 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*** A transient suppressor is normally selected according to the maximum reverse stand-off voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating
*** voltage level.
{ { Surge current waveform per Figure 5 and derate per Figure 2 of the General Data — 1500 W at the beginning of this group.
{{ VBR measured at pulse test current IT at an ambient temperature of 25°C.
# VF applies to unidirectional devices only.
相關(guān)PDF資料
PDF描述
1N4370ARL 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
1N4370CTA2 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
1N4703CRL 16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
1N4703CTA 16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
1N4703 16 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N6388 制造商:Microsemi Corporation 功能描述:Diode TVS Single Bi-Dir 36V 1.5KW 2-Pin Case 1
1N6389 制造商:ON Semiconductor 功能描述:Diode TVS Single Bi-Dir 45V 1.5KW 2-Pin Case 41A-04
1N6391 制造商:Microsemi Corporation 功能描述:Diode Schottky 45V 25A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER DO-4 LAW - Bulk 制造商:Microsemi 功能描述:Diode Schottky 45V 25A 2-Pin DO-4
1N6391_1 制造商:NAINA 制造商全稱:Naina Semiconductor ltd. 功能描述:Schottky Barrier Rectifier Diode
1N6391_10 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:HIGH RELIABILITY SCHOTTKY RECTIFIER
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