參數(shù)資料
型號: 1N6274A/92-E3
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: PLASTIC, CASE 1.5KE, 2 PIN
文件頁數(shù): 1/7頁
文件大小: 170K
代理商: 1N6274A/92-E3
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Document Number 88301
03-Mar-05
Vishay Semiconductors
www.vishay.com
1
Case Style 1.5KE
TRANSZORB Transient Voltage Suppressors
Major Ratings and Characteristics
Features
Glass passivated chip junction
Available in Unidrectional and Bidirectional
V(BR) Unidirectional
6.8 V to 540 V
V(BR) Bidirectional
6.8 v to 440 V
PPPM
1500 W
PM(AV)
6.5 W
IFSM (Unidirectional only)
200 A
Tj max.
175 °C
1500 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C
AEC-Q101 qualified
Typical Applications
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive, and
Telecommunication
Mechanical Data
Case: Molded plastic body over passivated junction
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and MIL-STD-750, Method
2026
Polarity: For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
Devices for bidirection Applications
For bidirectional types, use C or CA suffix for types
(e.g. 1.5KE440CA).
Electrical characteristics apply in both directions.
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40 mm) per Fig. 5
(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(4) VF = 3.5 V for 1.5KE220(A) & below; VF = 5.0 V for 1.5KE250(A) & above
Parameter
Symbol
Limit
Unit
Peak pulse power dissipation with a 10/1000
s waveform(1) (Fig. 1)
PPPM
1500
W
Peak pulse current with a 10/1000
s waveform(1)
IPPM
See Next Table
A
Steady state power dissipation lead lengths 0.375“ (9.5 mm)(2),
TL = 75 °C
PM(AV)
6.5
W
Peak forward surge current 8.3 ms single half sine-wave unidirectional
only(3)
IFSM
200
A
Maximum instantaneous forward voltage at 100 A for unidirectional only(4)
VF
3.5/5.0
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
相關(guān)PDF資料
PDF描述
1N6278/100-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6278A/68-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6280/92-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6281/93-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6285/62-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N6274AE3 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Unidirectional & Bidirectional Transient Voltage Suppressors
1N6274AE3/TR13 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Tape and Reel
1N6274AG 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 13V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6274AG 制造商:ON Semiconductor 功能描述:TVS DIODE
1N6274AHE3/51 功能描述:TVS DIODE 137VC 82.4A IPP 1.5KE 制造商:vishay semiconductor diodes division 系列:汽車級,AEC-Q101,TransZorb? 包裝:散裝 零件狀態(tài):停產(chǎn) 類型:齊納 電壓 - 反向關(guān)態(tài)(典型值):11.1V 電壓 - 擊穿(最小值):12.4V 電壓 - 箝位(最大值)@ Ipp:137V 電流 - 峰值脈沖(10/1000μs):82.4A 功率 - 峰值脈沖:1500W(1.5kW) 電源線路保護(hù):無 應(yīng)用:汽車級 不同頻率時的電容:- 工作溫度:-55°C ~ 175°C(TJ) 安裝類型:通孔 封裝/外殼:DO-201AA,DO-27,軸向 供應(yīng)商器件封裝:1.5KE 標(biāo)準(zhǔn)包裝:1,500