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參數資料
| 型號： | 1N5711 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Schottky Diodes(肖特基二極管) |
| 中文描述： | 肖特基二極管（肖特基二極管） |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 141K |
| 代理商： | 1N5711 |
1N5711 AND 1N6263
SCHOTTKY DIODES
FEATURES
¨
For general purpose applications.
¨
Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard
ring. The low forward voltage drop and fast
switching make it ideal for protection of MOS
devices, steering, biasing and coupling diodes for
fast switching and low logic level applications.
¨
These diodes are also available in the Mini-MELF case
with type designations LL5711 and LL6263.
MECHANICAL DATA
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
MAXIMUM RATINGS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Peak Inverse Voltage
1N5711
1N6263
V
RRM
V
RRM
70
60
Volts
Volts
Power Dissipation (Infinite Heat Sink)
P
tot
400
1) 2)
mW
Max. Single Cycle Surge
10
m
s Square Wave
I
FSM
2.0
Amps
Junction Temperature
T
j
125
1)
°
C
Storage Temperature Range
T
S
D 55 to +150
1)
°
C
NOTES
(1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
2/11/99
m
m
m
max.
Cathode
Mark
.020 (0.52)
max.
.079 (2.0)
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
DO-35
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOL
MIN.
TYP.
MAX.
UNIT
Reverse Breakdown Voltage
at I
R
= 10
m
A
1N5711
1N6263
V
(BR)R
V
(BR)R
70
60
D
D
D
D
Volts
Leakage Current
at V
R
= 50 V
I
R
D
D
200
nA
Forward Voltage Drop
at I
F
= 1 mA
at I
F
= 15 mA
V
F
V
F
D
D
D
D
0.41
1.0
Volts
Junction Capacitance
at V
R
= 0 V, f = 1 MH
Z
C
tot
D
D
2.0
pF
Reverse Recovery Time
at I
F
= I
R
= 5 mA, recover to 0.1 I
R
t
rr
D
D
1
ns
Thermal Resistance, Junction to Ambient Air
R
Q
JA
D
D
0.3
1)
K/mW
NOTES
(1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
相關PDF資料 |
PDF描述 |
|---|---|
| 1N5817L | 1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
| 1N5817L | 1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
| 1N5819 | Schottky Barrier Rectifier(肖特基勢壘整流器) |
| 1N5821S | SCHOTTKY BARRIER RECTIFIER DIODES |
| 1N5820S | SCHOTTKY BARRIER RECTIFIER DIODES |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5711#T25 | 功能描述:肖特基二極管與整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| 1N5711#T50 | 功能描述:肖特基二極管與整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| 1N5711 | 制造商:STMicroelectronics 功能描述:DIODE SCHOTTKY RF |
| 1N5711/D7 | 制造商:Vishay Intertechnologies 功能描述:RECTIFIER DIODE,SCHOTTKY,70V V(RRM),DO-204AH |
| 1N5711-1 | 制造商:Microsemi Corporation 功能描述:Diode Schottky 70V 0.033A 2-Pin DO-35 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 70V 0.033A 2-PIN DO-35 - Bulk 制造商:Microsemi 功能描述:Diode Schottky 70V 0.033A 2-Pin DO-35 |
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