參數(shù)資料
型號: 1N5711#T25
廠商: AGILENT TECHNOLOGIES INC
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.015 A, SILICON, SIGNAL DIODE
封裝: GLASS PACKAGE-2
文件頁數(shù): 2/6頁
文件大?。?/td> 57K
代理商: 1N5711#T25
2
Package Characteristics
Outline 15
Lead Material ........................................................................................ Dumet
Lead Finish .............................................................................. 95-5% Tin-Lead
Max. Soldering Temperature ................................................ 260
°C for 5 sec
Min. Lead Strength .................................................................... 4 pounds pull
Typical Package Inductance
1N5711, 1N5712: ................................................................................ 2.0 nH
2800 Series: ........................................................................................ 2.0 nH
2300 Series, 2900: .............................................................................. 3.0 nH
Typical Package Capacitance
1N5711, 1N5712: ................................................................................ 0.2 pF
2800 Series: ........................................................................................ 0.2 pF
2300 Series, 2900: ............................................................................ 0.07 pF
The leads on the Outline 15 package should be restricted so that the
bend starts at least 1/16 inch from the glass body.
Outline 15 diodes are available on tape and reel. The tape and reel
specification is patterned after RS-296-D.
Electrical Specifications at T
A = 25°C
General Purpose Diodes
Min.
Max.
V
F = 1 V Max.
Max.
Breakdown
Forward
at Forward
Reverse Leakage
Capaci-
Part
Package
Voltage
Current
tance
Number
Outline
V
BR (V)
V
F (mV)
I
F (mA)
I
R (nA) at VR (V)
C
T (pF)
5082-2800
15
70
410
15
200
50
2.0
1N5711
15
70
410
15
200
50
2.0
5082-2810
15
20
410
35
100
15
1.2
1N5712
15
20
550
35
150
16
1.2
5082-2811
15
410
20
100
8
1.2
5082-2835
15
8*
340
10*
100
1
1.0
Test
I
R = 10 AIF = 1 mA
*V
F = 0.45 V
V
R = 0 V
Conditions
*I
R = 100 A
f =1.0 MHz
Note:
Effective Carrier Lifetime (
τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835
which is measured at 20 mA.
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