參數(shù)資料
型號: 1N5404/70-E3
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 1/4頁
文件大?。?/td> 330K
代理商: 1N5404/70-E3
1N5400 thru 1N5408
Document Number 88516
25-Aug-05
Vishay General Semiconductor
www.vishay.com
1
DO-201AD
General Purpose Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
3.0 A
VRRM
50 V to 1000 V
IFSM
200 A
IR
5.0 A
VF
1.2 V
Tj max.
150 °C
Features
Low forward voltage drop
Low leakage current
High forward surge capability
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application.
(Note: Theses devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Mechanical Data
Case: DO-201AD, molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads,
solderable per J-STD-002B and JESD22-B102D
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N5400
1N5401
1N5402
1N5403
1N5404
1N5405
1N5406
1N5407
1N5408
Unit
Maximum repetitive peak
reverse voltage
VRRM
50
100
200
300
400
500
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
210
280
350
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
300
400
500
600
800
1000
V
Maximum average forward
rectified current 0.5" (12.5 mm)
lead length at TL = 105 °C
IF(AV)
3.0
A
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Maximum full load reverse
current, full cycle average 0.5"
(12.5 mm) lead length at
TL = 105 °C
IR(AV)
500
A
Operating junction and storage
temperature range
TJ,TSTG
- 50 to + 150
°C
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