參數(shù)資料
型號(hào)： 1N5381CE3TR
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類(lèi)： 齊納二極管
英文描述： 130 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝： ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 188K
代理商： 1N5381CE3TR
Silicon 5 Watt Zener Diodes
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2008
8-06-2008 REV D
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S C O T TS DALE DIVISION
1N5333B thru 1N5388B, e3
1N5
333
B
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1N53
88
B
DESCRIPTION
APPEARANCE
The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt
Zeners provides voltage regulation in a selection from 3.3 to 200 volts with
different tolerances as identified by specific suffix letter on the part number.
These plastic encapsulated Zeners have moisture classification of Level 1
with no dry pack required and are also available in various military
equivalent screening levels by adding a prefix identifier as also described in
the Features section. They may be operated at high maximum dc currents
with adequate heat sinking with their comparatively low thermal resistance
design.
Microsemi also offers numerous other Zener products to meet
higher and lower power applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
,e3
FEATURES
APPLICATIONS / BENEFITS
JEDEC registered 1N5333 to 1N5388B
Zener voltage available 3.3V to 200V
Standard voltage tolerances are plus/minus 5% with B
suffix and 10 % with A suffix identification
Tight tolerances available in plus or minus 2% or 1%
with C or D suffix respectively
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are available
by adding MQ, MX, or MV prefixes respectively to
part numbers.
Surface mount equivalents available as SMBJ5333 to
SMBJ5388B, or SMBG5333B to SMBG5388B
RoHS Compliant devices available by adding e3 suffix
Regulates voltage over a broad operating current and
temperature range
Wide selection from 3.3 to 200 V
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
Withstands high surge stresses
Minimal changes of voltage versus current as
specified by voltage regulation (
ΔV
Z)
High specified maximum current (I
ZM) when
adequately heat sunk
Moisture classification is Level 1 per IPC/JEDEC J-
STD-020B with no dry pack required
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Power dissipation at 25C: 5.0 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65C to
+150
C
Thermal Resistance: 25 C/W junction to lead at 3/8
(10 mm) lead length from body, or 85
C/W junction
to ambient when mounted on FR4 PC board (1oz
Cu) with 4 mm
2 copper pads and track width 1
mm, length 25 mm
Steady-State Power: 5 watts at T
L < 25
oC 3/8 inch
(10 mm) from body, or 1.47 watts at TA = 25
C
when mounted on FR4 PC described for thermal
resistance (also see Figure 1)
Forward voltage @1.0 A: 1.2 volts (maximum)
Solder Temperatures: 260 C for 10 s (max)
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
TERMINALS: Leads, Tin-Lead or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD-
750, method 2026
POLARITY: Cathode indicated by band. Diode to
be operated with the banded end positive with
respect to the opposite end.
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.7 grams
See package dimensions on last page
T-18
相關(guān)PDF資料
PDF描述
1N5383BE3TR 150 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5383CE3TR 150 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5383DE3TR 150 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5384BE3TR 160 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5384CE3TR 160 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N5381D/TR8 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE T-18 - Tape and Reel
1N5381E3/TR12 功能描述:DIODE ZENER 130V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:130V 容差:±20% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:190 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:500nA @ 93.6V 不同 If 時(shí)的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類(lèi)型:通孔 封裝/外殼:T-18，軸向 供應(yīng)商器件封裝:T-18 標(biāo)準(zhǔn)包裝:3,000
1N5381E3/TR13 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 130V, ? 20% - Tape and Reel
1N5381E3/TR8 功能描述:DIODE ZENER 130V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:130V 容差:±20% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:190 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:500nA @ 93.6V 不同 If 時(shí)的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類(lèi)型:通孔 封裝/外殼:T-18，軸向 供應(yīng)商器件封裝:T-18 標(biāo)準(zhǔn)包裝:1,000
1N5382/TR12 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 140V, ? 20% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 140V 20% T-18
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