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參數(shù)資料
| 型號(hào)： | 1N5280BTA2 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 190 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS, DO-204AH, 2 PIN |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大小： | 472K |
| 代理商： | 1N5280BTA2 |
1N5221B through 1N5281B Series
http://www.takcheong.com
6
APPLICATION NOTE - ZENER VOLTAGE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA.
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for
θLA will vary and
depends on the device mounting method.
θLA is generally 30
to 40
°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
TJ = TL + TJL.
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
TJL = θJLPD.
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ(TJ) may be estimated.
Changes in voltage, VZ, can then be found from:
V = θVZTJ.
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
LL
500
400
300
200
100
0
0.2
0.4
0.6
0.8
1
2.4-60 V
62-200 V
L , LEAD LENGTH TO HEAT SINK (INCH)
JL
,JUNCTION
T
O
LEAD
THERMA
L
RESISTANC
E
(
°
C/W)
θ
Figure 2. Typical Thermal Resistance
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
+2
5°C
+12
5°C
1000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
34
5
6
7
8
9
10
11
12
VZ , NOMINAL ZENER VOLTAGE (VOLTS)
I
,LEAKAGE
CURRENT
(
A
)
R
Figure 3. Typical Leakage Current
13
14
15
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| 1N4370AUR-1TR | 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
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| 1N5523BURTR | 5.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5280BUR-1 | 制造商:Microsemi Corporation 功能描述:ZENER SGL 190V 5% 500MW 2PIN DO-213AA - Bulk |
| 1N5280DO35 | 功能描述:DIODE ZENER 190V 500MW DO-35 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/齊納 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 電壓 - 齊納（標(biāo)稱）(Vz):36V 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:900mV @ 10mA 電流 - 在 Vr 時(shí)反向漏電:100nA @ 27V 容差:±5% 功率 - 最大:200mW 阻抗（最大）(Zzt):70 歐姆 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:SOT-323 包裝:剪切帶 (CT) 工作溫度:-65°C ~ 150°C 產(chǎn)品目錄頁(yè)面:1585 (CN2011-ZH PDF) 其它名稱:MMBZ5258BWMMBZ5258BWCTMMBZ5258BWCT-NDMMBZ5258BWDICT |
| 1N5281A | 功能描述:Zener Diode 制造商:microsemi corporation 系列:* 零件狀態(tài):在售 標(biāo)準(zhǔn)包裝:1 |
| 1N5281A (DO-35) | 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE DO-35 SD - Bulk 制造商:Microsemi Corporation 功能描述:DIODE ZENER 500MW 200V DO-35 |
| 1N5281B | 制造商:Microsemi Corporation 功能描述:DIODE,IN5281B ZENER 200V INDL - Bulk |
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