參數(shù)資料
型號： 1N5276BRL2
元件分類： 參考電壓二極管
英文描述： 150 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
封裝： HERMETIC SEALED, GLASS, DO-204AH, 2 PIN
文件頁數(shù)： 3/10頁
文件大?。?/td> 472K
代理商： 1N5276BRL2
1N5221B through 1N5281B Series
http://www.takcheong.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless
otherwise noted. Based on DC measurements at thermal
equilibrium; lead length = 3/8”; thermal resistance of heat sink =
30
°C/W, V
F = 1.1 V Max @ IF = 200mA for all types)
Symbol
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Zener Current
ZZT
Maximum Zener Impedance @ IZT
IZk
Reverse Zener Current
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
θ
VZ
Maximum Zener Voltage Temperature Coefficient
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.1 V Max @ IF = 200mA for all types)
Zener Voltage (Note 3.)
Zener Impedance (Note 4.)
Leakage Current
VZ (Volts)
@ IZT
ZZT @ IZT
ZZK @ IZK
IR @ VR
θθθθ
VZ
(Note 5.)
Device
(Note 2.)
Device
Marking
Min
Nom
Max
(mA)
(
)(
)
(mA)
(
A)
(Volts)
(%/C)
1N5221B
2.28
2.4
2.52
20
30
1200
0.25
100
1
-0.085
1N5222B
2.375
2.5
2.625
20
30
1250
0.25
100
1
-0.085
1N5223B
2.565
2.7
2.835
20
30
1300
0.25
75
1
-0.08
1N5224B
2.66
2.8
2.94
20
30
1400
0.25
75
1
-0.08
1N5225B
2.85
3
3.15
20
29
1600
0.25
50
1
-0.075
1N5226B
3.135
3.3
3.465
20
28
1600
0.25
25
1
-0.07
1N5227B
3.42
3.6
3.78
20
24
1700
0.25
15
1
-0.065
1N5228B
3.705
3.9
4.095
20
23
1900
0.25
10
1
-0.06
1N5229B
4.085
4.3
4.515
20
22
2000
0.25
5
1
±0.055
1N5230B
4.465
4.7
4.935
20
19
1900
0.25
5
2
±0.03
1N5231B
4.845
5.1
5.355
20
17
1600
0.25
5
2
±±±±0.03
1N5232B
5.32
5.6
5.88
20
11
1600
0.25
5
3
+0.038
1N5233B
5.7
6
6.3
20
7
1600
0.25
5
3.5
+0.038
1N5234B
5.89
6.2
6.51
20
7
1000
0.25
5
4
+0.045
1N5235B
6.46
6.8
7.14
20
5
750
0.25
3
5
+0.05
2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a standard tolerance on the nominal zener voltage of
±5%.
3. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30
°C
±1°C and 3/8” lead length.
4. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits
are for IZ(AC) = 0.1 IZ(DC) with AC frequency = 60Hz.
5. TEMPERATURE COEFFICIENT (
θθθθ
VZ)
Test conditions for temperature coefficient are as follows:
A. IZT = 7.5mA, T1 = 25
°C, T
2 = 125
°C (1N5221B through 1N5242B)
B. IZT = Rated IZT, T1 = 25
°C, T
2 = 125
°C (1N5243B through 1N5281B)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient
temperature.
相關(guān)PDF資料
PDF描述
1N5276BRR1 150 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N5277BRL 160 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N5278BRA1 170 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N5278BRA2 170 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N5278BRL2 170 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N5276B-TP 功能描述:DIODE ZENER 500MW 150V DO-35 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/齊納 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 電壓 - 齊納（標(biāo)稱）(Vz):36V 電壓 - 在 If 時為正向 (Vf)（最大）:900mV @ 10mA 電流 - 在 Vr 時反向漏電:100nA @ 27V 容差:±5% 功率 - 最大:200mW 阻抗（最大）(Zzt):70 歐姆 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:SOT-323 包裝:剪切帶 (CT) 工作溫度:-65°C ~ 150°C 產(chǎn)品目錄頁面:1585 (CN2011-ZH PDF) 其它名稱:MMBZ5258BWMMBZ5258BWCTMMBZ5258BWCT-NDMMBZ5258BWDICT
1N5276BUR-1 制造商:Microsemi Corporation 功能描述:ZENER SGL 150V 5% 500MW 2PIN DO-213AA - Bulk
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1N5277A(DO-35)TR 制造商:Microsemi Corporation 功能描述:DIODE ZENER 160V 500MW DO-35 制造商:Microsemi Corporation 功能描述:DIODE ZENER 160V 500MW DO35
1N5277B (DO-35) 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE DO-35 SD - Bulk 制造商:Microsemi Corporation 功能描述:DIODE ZENER 500MW 160V DO-35
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