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參數(shù)資料
| 型號(hào)： | 1N4935GPHE3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | 1N4935GPHE3/54 |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88509
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4933GP thru 1N4937GP
Vishay General Semiconductor
Note
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
1N4933GP
1N4934GP
1N4935GP
1N4936GP
1N4937GP
UNIT
Maximum instantaneous
forward voltage
1.0 A
VF
1.2
V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 125 °C
100
Maximum reverse
recovery time
IF = 1.0 A, VR = 30 V
trr
200
ns
Typical junction
capacitance
4.0 V, 1 MHz
CJ
15
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1N4933GP
1N4934GP
1N4935GP
1N4936GP
1N4937GP
UNIT
Typical thermal resistance
RJA (1)
55
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1N4933GP-E3/54
0.336
54
5500
13" diameter paper tape and reel
1N4933GP-E3/73
0.336
73
3000
Ammo pack packaging
1N4933GPHE3/54 (1)
0.336
54
5500
13" diameter paper tape and reel
1N4933GPHE3/73 (1)
0.336
73
3000
Ammo pack packaging
Ambient Temperature (°C)
Average
Forward
Rectified
Current
(A)
0
25
50
75
100
125
150
175
0
0.25
0.50
0.75
1.00
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
1
10
100
0
10
20
30
40
Peak
Forward
S
urge
Current
(A)
Number of Cycles at 60 Hz
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N4934GPT50A | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4935-E3/54 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4936-E3/73 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4937-E3/54 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4942GP-E3 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4935GP-M3/54 | 功能描述:DIODE GEN PURP 200V 1A DO204AL 制造商:vishay semiconductor diodes division 系列:汽車級(jí)，AEC-Q101 包裝:帶卷（TR） 零件狀態(tài):有效 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:200V 電流 - 平均整流（Io）:1A 不同 If 時(shí)的電壓 - 正向（Vf）:1.2V @ 1A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間（trr）:200ns 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 200V 不同?Vr，F(xiàn) 時(shí)的電容:15pF @ 4V，1MHz 安裝類型:通孔 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商器件封裝:DO-204AL（DO-41） 工作溫度 - 結(jié):-65°C ~ 175°C 標(biāo)準(zhǔn)包裝:5,500 |
| 1N4935GP-M3/73 | 功能描述:DIODE GEN PURPOSE DO-204AL 制造商:vishay semiconductor diodes division 系列:* 零件狀態(tài):停產(chǎn) 標(biāo)準(zhǔn)包裝:3,000 |
| 1N4935GP-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 200V 1A 2-Pin DO-41 T/R |
| 1N4935G-T | 功能描述:整流器 1.0A 200V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4935G-T3 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:1.0A GLASS PASSIVATED FAST RECOVERY DIODE |
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