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參數(shù)資料
| 型號(hào)： | 1N4747ARL2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 20 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 封裝： | GLASS, CASE 59-03, 2 PIN |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大小： | 55K |
| 代理商： | 1N4747ARL2 |
GENERAL DATA — 500 mW DO-35 GLASS
Motorola TVS/Zener Device Data
6-5
500 mW DO-35 Glass Data Sheet
APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA.
θLAisthelead-to-ambientthermalresistance(°C/W)andPDis
the power dissipation. The value for
θLA will vary and depends
on the device mounting method.
θLA is generally 30 to 40°C/W
for the various clips and tie points in common use and for
printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the mea-
sured value of TL, the junction temperature may be deter-
mined by:
TJ = TL + TJL.
TJL is the increase in junction temperature above the lead
temperature and may be found as follows:
TJL = θJLPD.
θJL may be determined from Figure 3 for dc power condi-
tions. For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ(TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
V = θVZ TJ.
θVZ, the zener voltage temperature coefficient, is found from
Figure 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Surge limitations are given in Figure 5. They are lower than
would be expected by considering only junction temperature,
as current crowding effects cause temperatures to be ex-
tremely high in small spots, resulting in device degradation
should the limits of Figure 5 be exceeded.
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| 1N4747A-T | 功能描述:穩(wěn)壓二極管 1W 20V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1N4747A-T50A | 功能描述:DIODE ZENER 20V 1W DO41 制造商:on semiconductor 系列:- 包裝:剪切帶（CT） 零件狀態(tài):Digi-Key 停止供應(yīng) 電壓 - 齊納（標(biāo)稱值）（Vz）:20V 容差:±5% 功率 - 最大值:1W 阻抗（最大值）（Zzt）:22 Ohms 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 15.2V 工作溫度:-65°C ~ 200°C 安裝類型:通孔 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商器件封裝:DO-41 基本零件編號(hào):1N4747 標(biāo)準(zhǔn)包裝:1 |
| 1N4747ATA | 功能描述:DIODE ZENER 20V 1W DO41 制造商:smc diode solutions 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱值）（Vz）:20V 容差:±5% 功率 - 最大值:1W 阻抗（最大值）（Zzt）:22 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 15.2V 不同 If 時(shí)的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:200°C 安裝類型:通孔 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商器件封裝:DO-41 標(biāo)準(zhǔn)包裝:1 |
| 1N4747A-TAP | 功能描述:穩(wěn)壓二極管 20 Volt 1.3 Watt RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1N4747A-TP | 功能描述:穩(wěn)壓二極管 1.0W 20V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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