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參數(shù)資料
| 型號： | 1N4448A0 |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35 |
| 封裝： | ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 222K |
| 代理商： | 1N4448A0 |
1N4148/1N4448/1N914B
500mW High Speed Switching Diode
Small Signal Diode
Fast switching device(Trr<4.0nS)
Through-hole device type mounting
Moisture sensitivity level 1
Solder hot dip Tin(Sn) lead finish
Pb free version and RoHS compliant
Min
Max
Min
Max
Case : : DO-35 package (SOD-27)
0.45
0.55
0.018
0.022
High temperature soldering guaranteed : 260°C/10s
3.05
5.08
0.120
0.
201
25.40
38.10
1.000
1.500
1.53
2.28
0.060
0.090
Package
DO-35
Maximum Ratings
10K / 14" Reel
Power Dissipation
Part No.
1N
4148 A0
1N
4448 A0
Packing
5K / Ammo
PD
VRRM
10K / 14" Reel
Peak Forward Surge Current
Pluse Width = 1uS, Square Wave
1N
4148 R0
1N
4448 R0
Rating at 25°C ambient temperature unless otherwise specified.
Type Number
1N914B R0
10K / 14" Reel
Junction and Storage Temperature Range
Average Forward Current
IFM
IO
TJ, TSTG
RθJA
Thermal Resistance (Junction to Ambient)
Non-Repetitive Peak Forward Current
mA
°C
-65 to + 150
450
150
°C/W
240
mA
D
500
100
DO-35 Axial Lead
Units
V
mW
HERMETICALLY SEALED GLASS
Value
Features
Mechanical Data
Unit (mm)
Dimensions
All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
Unit (inch)
IFSM
2.0
A
Maximum Ratings and Electrical Characteristics
A
B
C
Repetitive Peak Reverse Voltage
Symbol
Polarity : Indicated by cathode band
Ordering Information
1N
914B A0
5
K / Ammo
Weight : 109 ± 4 mg
A
B
C
D
Version : D10
相關PDF資料 |
PDF描述 |
|---|---|
| 1N4448T50R | 0.2 A, SILICON, SIGNAL DIODE, DO-35 |
| 1N914T50A | 0.2 A, SILICON, SIGNAL DIODE, DO-35 |
| 1N914AT26A | 0.2 A, SILICON, SIGNAL DIODE, DO-35 |
| 1N914AT26R | 0.2 A, SILICON, SIGNAL DIODE, DO-35 |
| 1N914BT26A | 0.2 A, SILICON, SIGNAL DIODE, DO-35 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4448-B | 功能描述:二極管 - 通用，功率，開關 Vr/75V If/500mA BULK RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| 1N4448F | 制造商:- - 功能描述:1N4448F 制造商:N/A 功能描述:1N4448F |
| 1N4448HLP | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| 1N4448HLP_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| 1N4448HLP_12 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
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