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參數(shù)資料
| 型號： | 1N4003 |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 1N4003 |
RATING& CHARACTERISTIC CURVES FOR SERIES 1N4001- 1N4007
Data Sheet No. GPDP-101-2B
Tel.: (310) 767-1052
Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248
U.S.A
18020 Hobart Blvd., Unit B
FIGURE 1. FORWARD CURRENT DERATING CURVE
Ambient Temperature, C
o
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
Number of Cycles at 60 Hz
1
10
100
50
40
30
20
10
0
1 AMP GENERAL PURPOSE SILICON DIODES
4.97bgpdp101
H2
Single Phase, Half wave, 60 Hz
Resistive and Inductive Loads
Lead Length= 0.375" (9.5 mm)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
Instantaneous Forward Voltage (Volts)
0.01
0.1
1.0
10
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
Reverse Voltage, (Volts)
1
0.1
100
FIGURE 6. PEAK FORWARD SURGE CURRENT
10
0.1
100
T = 25 C
J
o
Pulse Duration (Milliseconds)
100
0.1
0.01
10
1.0
10
1000
T = 25 C
J
o
T = 25 C
Non-repetitive Square Pulse
di/dt =200
S
J
o
T = 25 C
Pulse Width= 300 S
1% Duty Cycle
J
o
JEDEC Method
8.3 mS Half Sine Wave
.01
0.1
1.0
10
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
Percent of Rated Peak Reverse Voltage
100
120
140
20
60
80
T = 25 C
J
o
T = 100 C
J
o
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N4004 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4001 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4005 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4007L | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| 1N4002AMP | 1 A, 100 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4003- | 制造商:TAIW 功能描述:General Purpose 200V Through Hole Rectifier DO-41 1.0A |
| 1N4003 TR | 制造商:NONE 功能描述: |
| 1N4003 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N4003 BK | 功能描述:DIODE GEN PURPOSE DO41 制造商:central semiconductor corp 系列:* 零件狀態(tài):生命周期結(jié)束 標準包裝:2,000 |
| 1N4003 BULK | 制造商:ROHM 功能描述:General Purpose 200V Through Hole Rectifier DO-41 1A |
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