參數(shù)資料
型號: 1N4001GP
廠商: MICROSEMI CORP
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
文件頁數(shù): 1/3頁
文件大?。?/td> 238K
代理商: 1N4001GP
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax:
(818) 701-4939
1N4001GP
thru
1N4007GP
1 Amp Glass
PassivatedRectifier
50 - 1000 Volts
DO-41
Features
Glass Passivated Junction
Low Current Leakage
Metallurgical Bonded Construction
Low Cost
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.166
.205
4.10
5.20
B
.080
.107
2.00
2.70
C
.028
.034
.70
.90
D
1.000
---
25.40
---
Maximum Ratings
Operating Temperature: -50
°C to +175°C
Storage Temperature: -50
°C to +175°C
Maximum Thermal Resistance; 20
°C/W Junction To Lead
Microsemi
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS Voltage
Maximum DC
Blocking
Voltage
1N4001GP
50V
35V
50V
1N4002GP
100V
70V
100V
1N4003GP
200V
140V
200V
1N4004GP
400V
280V
400V
1N4005GP
600V
420V
600V
1N4006GP
800V
560V
800V
1N4007GP
1000V
700V
1000V
Electrical Characteristics @ 25
°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A
TA = 75
°C
Peak Forward Surge
Current
IFSM
30A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
1.1V
IFM = 1.0A;
TJ = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
5.0
A
50
A
TJ = 25
°C
TJ = 125
°C
Typical Junction
Capacitance
CJ
15pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300
sec, Duty cycle 2%
A
B
C
D
Cathode
Mark
相關PDF資料
PDF描述
1N4004GP 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1N4007GP 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1N4001G 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1N4004G 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1N4001G 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
相關代理商/技術參數(shù)
參數(shù)描述
1N4001GP/1 功能描述:整流器 Vr/50V Io/1A BULK Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N4001GP/23 功能描述:整流器 Vr/50V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N4001GP/4 功能描述:整流器 Vr/50V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N4001GP/54 功能描述:整流器 Vr/50V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N4001GP_11 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:1 Amp Glass Passivated Rectifier 50 - 1000 Volts