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參數(shù)資料
| 型號(hào)： | 1N23E |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, KU BAND, MIXER DIODE, DO-23 |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | 1N23E |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL
MAXIM
UNITS
NF
F = 9375 MHz
Plo = 1.0 mW
NFif = 1.5 dB
RL = 100
IF = 30 MHz
7.5
dB
VSWR
1.3
Z
IF
RL = 22
f = 1000 Hz
335
465
frange
8.0
12.4
GHz
SILICON MIXER DIODE
1N23E
DESCRIPTION:
The
ASI 1N23E is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
FEATURES:
High burnout resistance
Low noise figure
Hermetically sealed package
MAXIMUM RATINGS
IF
20 mA
VR
1.0 V
PDISS
5.0 (ERGS) @ TC = 25 °C
TJ
-55 °C to +150 °C
TSTG
-55 °C to +150 °C
PACKAGE STYLE DO- 23
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N23WGM | SILICON, X-KU BAND, MIXER DIODE, DO-23 |
| 1N248 | 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 1N4530 | 40 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 1N250B | 20 A, 200 V, SILICON, RECTIFIER DIODE |
| 1N251A | SILICON, SIGNAL DIODE, DO-7 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N23EM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON POINT CONTACT MIXER DIODES |
| 1N23EMR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON POINT CONTACT MIXER DIODES |
| 1N23ER | 制造商:ASI 制造商全稱:ASI 功能描述:SILICON MIXER DIODE |
| 1N23F | 制造商:ALPHA 功能描述:5961000707024 |
| 1N23FM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON POINT CONTACT MIXER DIODES |
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