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參數(shù)資料
| 型號(hào)： | 1M200ZS5 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 齊納二極管 |
| 英文描述： | 200 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 156K |
| 代理商： | 1M200ZS5 |
GENERAL DATA — 1-3 WATT DO-41 SURMETIC 30
Motorola TVS/Zener Device Data
6-44
1–3 Watt DO-41 Surmetic 30 Data Sheet
t, TIME (SECONDS)
0.0001 0.0002
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.3
0.5
0.7
1
2
3
5
7
10
20
30
D =0.5
0.2
0.1
0.05
0.01
D = 0
DUTY CYCLE, D =t1/t2
θ JL
(t,
D)
TRANSIENT
THERMAL
RESIST
ANCE
JUNCTION-T
O-LEAD
(
C/W)
°
PPK
t1
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
SINGLE PULSE
TJL = θJL (t)PPK
REPETITIVE PULSES
TJL = θJL (t,D)PPK
t2
0.02
10
20
30
50
100
200
300
500
1K
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30 50
100
PW, PULSE WIDTH (ms)
P
,PEAK
SURGE
POWER
(W
A
TTS)
PK
1
2
5
10
20
50
100
200
400
1000
0.0003
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
3
TA = 125°C
NOMINAL VZ (VOLTS)
AS
SPECIFIED
IN
ELEC.
CHAR.
TABLE
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
Figure 3. Maximum Surge Power
Figure 4. Typical Reverse Leakage
I R
,REVERSE
LEAKAGE
(
Adc)
@
V
R
RECTANGULAR
NONREPETITIVE
WAVEFORM
TJ = 25°C PRIOR
TO INITIAL PULSE
APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL = θLA PD + TA
θLA is the lead-to-ambient thermal resistance (°C/W) and
PD is the power dissipation. The value for θLA will vary and
depends on the device mounting method.
θLA is generally
30–40
°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the mea-
sured value of TL, the junction temperature may be deter-
mined by:
TJ = TL + TJL
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
TJL = θJL PD
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ (TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
V = θVZ TJ
θVZ,thezenervoltagetemperaturecoefficient,isfoundfrom
Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Data of Figure 2 should not be used to compute surge capa-
bility. Surge limitations are given in Figure 3. They are lower
than would be expected by considering only junction tempera-
ture, as current crowding effects cause temperatures to be ex-
tremely high in small spots resulting in device degradation
should the limits of Figure 3 be exceeded.
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