參數(shù)資料
型號(hào): 1H8-TB
廠商: Won-Top Electronics Co., Ltd.
英文描述: 1.0A ULTRAFAST DIODE
中文描述: 安培超快二極管
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 52K
代理商: 1H8-TB
1H1 – 1H8
2 of 4 2006 Won-Top Electronics
0.01
0.1
1.0
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1H
1 -
1H4
1H6
-
1H8
T = 25 C
Pulse width = 300 s
°
1H5
10
20
30
0
1
10
100
I
,
F
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
50V DC
Approx
50
NI (Non-inductive)
10
NI
1.0
NI
Oscilloscope
(Note 1)
Pulse
Generator
(Note 2)
Device
Under
Test
t
rr
Set time base for 5/10ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)
1
10
100
1
10
100
C
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
1H
1 -
1H5
1H6
-
1H8
T = 25 C
f = 1.0MHz
0
0.25
0.50
0.75
1.00
0
25
50
75
100
125
150
175
I
,
(
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
Single phase half wave
Resistive or Inductive load
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