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參數(shù)資料
| 型號： | 08F1990 |
| 英文描述： | DIODE ULTRA FAST 6A |
| 中文描述： | 超快速二極管6A條 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 188K |
| 代理商： | 08F1990 |
MTW16N40E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
400
—
420
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 320 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
0.25
1.0
mAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.0
4.0
—
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 8.0 Adc)
RDS(on)
—
0.225
0.24
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 16 Adc)
(ID = 8.0 Adc, TJ = 125°C)
VDS(on)
—
4.8
4.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)
gFS
8.0
10
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
—
2570
3600
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
330
460
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
82
164
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(V
200 Vd
I
16 Ad
td(on)
—
29
50
ns
Rise Time
(VDD = 200 Vdc, ID = 16 Adc,
VGS =10Vdc
tr
—
62
70
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
76
170
Fall Time
G
)
tf
—
57
95
Gate Charge
(See Figure 8)
(V
320 Vd
I
16 Ad
QT
—
66
93
nC
(VDS = 320 Vdc, ID = 16 Adc,
VGS = 10 Vdc)
Q1
—
17
—
VGS = 10 Vdc)
Q2
—
31
—
Q3
—
30
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 16 Adc, VGS = 0 Vdc)
(IS = 16 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
1.0
0.9
1.6
—
Vdc
Reverse Recovery Time
(See Figure 9)
(I
16 Ad
V
0 Vd
trr
—
340
—
ns
(See Figure 9)
(IS = 16 Adc, VGS = 0 Vdc,
ta
—
228
—
( S
,
GS
,
dIS/dt = 100 A/s)
tb
—
112
—
Reverse Recovery Stored Charge
QRR
—
4.3
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
5.0
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
13
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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