- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24947 > 08F1781 TRANSISTOR MOSFET TO-220 PDF資料下載
參數(shù)資料
| 型號： | 08F1781 |
| 英文描述： | TRANSISTOR MOSFET TO-220 |
| 中文描述： | 晶體管場效應(yīng)管- 220 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 159K |
| 代理商： | 08F1781 |
MTP1N50E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
1.0E–05
1.0E–04
1.0E–02
0.1
1.0
0.01
1.0E–03
1.0E–01
1.0E+00
1.0E+01
0.2
0.05
0.01
SINGLE PULSE
0.02
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
10
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
50
30
20
10
ID = 1 A
40
1.0
100
150
t,TIME (ms)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
10 ms
1 ms
dc
100
s
10
s
0.1
D = 0.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 08F1917 | TRANSISTOR MOSFET TO-247 |
| 08F1928 | TRANSISTOR MOSFET TO-247 |
| 08F1985 | DIODE ULTRA FAST 3A |
| 08F1990 | DIODE ULTRA FAST 6A |
| 08H05 | Analog IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 08-F40-10 | 制造商:ARIES 制造商全稱:Aries Electronics, Inc. 功能描述:Thru-Hole .040 [1.02] Female DIP Strips |
| 08-F40-10TL | 制造商:ARIES 制造商全稱:Aries Electronics, Inc. 功能描述:Thru-Hole .040 [1.02] Female DIP Strips |
| 08F433GPDR | 制造商: 功能描述: |
| 08F623JPCR | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 08F683FPCM | 制造商: 功能描述: 制造商:undefined 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。