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參數(shù)資料
| 型號： | μPG110B |
| 廠商： | NEC Corp. |
| 英文描述： | 2 to 8 GHz WIDE BAND AMPLIFIER(2-8GHz 寬帶放大器) |
| 中文描述： | 2至8GHz寬帶放大器（2 - 8GHz的寬帶放大器） |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 45K |
| 代理商： | ΜPG110B |
7
μ
PG110B
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
[
μ
PG110B]
Soldering process
Soldering conditions
Symbol
Partial heating method
Terminal temperature: 300 C or below,
Flow time: 10 seconds or below,
Exposure limit*: None
*
: Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Note
Do not apply more than a single process at once, except for “Partial heating method”.
ATTENTION
Take great care to prevent static electricity because the IC circuity is composed of GaAs MES FET.
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