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參數(shù)資料
| 型號(hào)： | μPG103B |
| 廠商： | NEC Corp. |
| 英文描述： | Wide-Band Amplifier(寬帶放大器) |
| 中文描述： | 寬帶放大器（寬帶放大器） |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 41K |
| 代理商： | ΜPG103B |
μ
PG103B
6
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
TYPES OF SURFACE MOUNT DEVICE
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535EJ7V0IF00).
μ
PG103B
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230 C or below,
Reflow time: 10 seconds or below (210 C or higher),
Number of reflow process: 1, Exposure limit
*
: None
Partial heating method
Terminal temperature: 260 C or below,
Flow time: 10 seconds or below,
Exposure limit
*
: None
*
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Note
Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION
This IC must be handled with great care to prevent static discharge because its circuitry is
composed of GaAs MES FET.
Caution
The Grate Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the Japanese law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
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