- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384065 > μPD42S65805 (NEC Corp.) 8,388,608 Words by 8 Bits CMOS dynamic RAMs(64M 動態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | μPD42S65805 |
| 廠商： | NEC Corp. |
| 英文描述： | 8,388,608 Words by 8 Bits CMOS dynamic RAMs(64M 動態(tài)RAM) |
| 中文描述： | 8388608字8位的CMOS（6400動態(tài)RAM動態(tài)存儲器） |
| 文件頁數(shù)： | 5/36頁 |
| 文件大小： | 226K |
| 代理商： | ΜPD42S65805 |
第1頁第2頁第3頁第4頁當前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
μ
PD4264805, 42S65805, 4265805
5
Input/Output Pin Functions
The
μ
PD4264805, 42S65805, 4265805 have input pins RAS, CAS, WE, OE, Address
Note
and input/output
pins I/O1 to I/O8.
Pin name
RAS
(Row address strobe)
CAS
(Column address strobe)
A0 to A
×
Note
(Address inputs)
WE
(Write enable)
OE
(Output enable)
I/O1 to I/O8
(Data inputs/outputs)
Input/Output
Function
Input
RAS activates the sense amplifier by latching a row address and selecting a
corresponding word line.
It refreshes memory cell array of one line selected by the row address.
It also selects the following function.
CAS before RAS self refresh, CAS before RAS refresh
Input
CAS activates data input/output circuit by latching column address and
selecting a digit line connected with the sense amplifier.
Input
Address bus.
Input total 23-bit of address signal, upper bits and lower bits
Note
in sequence
(address multiplex method).
Therefore, one word is selected from 8,388,608-word by 8-bit memory cell
array.
In actual operation, latch row address by specifying row address and
activating RAS.
Then, switch the address bus to column address and activate CAS.
Each address is taken into the device when RAS and CAS are activated.
Therefore, the address input setup time (t
ASR
, t
ASC
) and hold time (t
RAH
, t
CAH
)
are specified for the activation of RAS and CAS.
Input
Write control signal.
Write operation is executed by activating RAS, CAS and WE.
Input
Read control signal.
Read operation can be executed by activating RAS, CAS and OE.
If WE is activated during read operation, OE is to be ineffective in the
device.
Therefore, read operation cannot be executed.
Input/Output
8-bit data bus.
I/O1 to I/O8 are used to input/output data.
Note
Part number
Address inputs
Upper bits
Lower bits
μ
PD4264805
A0 - A12
13
10
μ
PD42S65805, 4265805
A0 - A11
12
12
相關PDF資料 |
PDF描述 |
|---|---|
| μPD4264805 | 8,388,608 Words by 8 Bits CMOS dynamic RAMs(64M 動態(tài)RAM) |
| μPD4265805 | 8,388,608 Words by 8 Bits CMOS dynamic RAMs(64M 動態(tài)RAM) |
| μPD431009 | 1M-Bit CMOS Fast Static RAM(1M位CMOS 快速靜態(tài)) |
| μPD431232AL | 1M CMOS synchronous Fast static RAM(1M 位CMOS 同步快速靜態(tài)RAM) |
| μPD431532L | 1M-Bit CMOS Synchronous Fast SRAM(1M CMOS同步快速靜態(tài)RAM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PD430 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| PD4306 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:POW-R-BLOK Dual SCR Isolated Module (600 Amperes / Up to 2400 Volts) |
| PD430607 | 功能描述:SCR MOD ISO DUAL 600V 700A RoHS:是 類別:半導體模塊 >> SCR 系列:- 其它有關文件:SCR Module Selection Guide 標準包裝:10 系列:- 結構:串聯(lián) - SCR/二極管 SCR 數(shù)目，二極管:1 SCR，1 個二極管 電壓 - 斷路:1600V 電流 - 柵極觸發(fā)電流 (Igt)（最大）:150mA 電流 - 導通狀態(tài) (It (AV))（最大）:95A 電流 - 導通狀態(tài) (It (RMS))（最大）:210A 電流 - 非重復電涌，50、60Hz (Itsm):1785A，1870A 電流 - 維持(Ih):250mA 安裝類型:底座安裝 封裝/外殼:ADD-A-PAK（3 + 2） 包裝:散裝 其它名稱:*IRKL92/16AIRKL92/16IRKL92/16-ND |
| PD4307 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts) |
| PD430807 | 功能描述:SCR MOD ISO DUAL 800V 700A RoHS:是 類別:半導體模塊 >> SCR 系列:- 其它有關文件:SCR Module Selection Guide 標準包裝:10 系列:- 結構:串聯(lián) - SCR/二極管 SCR 數(shù)目，二極管:1 SCR，1 個二極管 電壓 - 斷路:1600V 電流 - 柵極觸發(fā)電流 (Igt)（最大）:150mA 電流 - 導通狀態(tài) (It (AV))（最大）:95A 電流 - 導通狀態(tài) (It (RMS))（最大）:210A 電流 - 非重復電涌，50、60Hz (Itsm):1785A，1870A 電流 - 維持(Ih):250mA 安裝類型:底座安裝 封裝/外殼:ADD-A-PAK（3 + 2） 包裝:散裝 其它名稱:*IRKL92/16AIRKL92/16IRKL92/16-ND |
發(fā)布緊急采購，3分鐘左右您將得到回復。