參數(shù)資料
型號(hào): μPA808T
廠商: NEC Corp.
英文描述: Low Noise Microwave Amlification NPN Epitaxial Silicon Transistor(應(yīng)用于微波低噪聲放大器的NPN硅外延晶體管)
中文描述: 低噪聲微波Amlification npn型外延硅晶體管(應(yīng)用于微波低噪聲放大器的npn型硅外延晶體管)
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 55K
代理商: ΜPA808T
μ
PA808T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
DC Current Gain
h
FE
V
CE
= 2 V, I
C
= 20 mA
Note 1
70
140
Gain Bandwidth Product (1)
f
T
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
9
11
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
7
9
GHz
Feed-back Capacitance
C
re
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.8
pF
Insertion Power Gain (1)
|S
21e
|
2
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
7
8.5
dB
Insertion Power Gain (2)
|S
21e
|
2
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
6
7.5
dB
Noise Figure (1)
NF
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
1.3
2
dB
Noise Figure (2)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
1.3
2
dB
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 2 V, I
C
= 20 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
Notes 1.
Pulse Measurement: Pw
350
μ
s, Duty cycle
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
KB
Marking
T86
h
FE
Value
70 to 140
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
100
0
50
100
150
90 mW
Ambient Temperature T
A
(°C)
T
T
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
40
30
20
10
0
0.5
1.0
V
CE
= 2 V
Base to Emitter Voltage V
BE
(V)
C
C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
15
10
5
0
1.0
2.0
3.0
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
Collector to Emitter Voltage V
CE
(V)
C
C
180 mW
2 Elements in Total
Per Element
Collector Current I
C
(mA)
D
F
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
V
CE
= 2 V
V
CE
= 1 V
1
2
5
10
20
50
100
相關(guān)PDF資料
PDF描述
μPB1502GR 1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 到 2.0GHz 定標(biāo)器)
μPB1502GR(1) 1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 到 2.0GHz 定標(biāo)器)
μPB1505GR silicon prescaler IC(硅預(yù)定標(biāo)器)
μPB1507GV 3.1 GHz input, High Division Silicon Prescaler ICs(3.0 GHz 定標(biāo)器)
μPB1506GV 3.0 GHz input, High Division Silicon Prescaler ICs(3.0 GHz 定標(biāo)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PA80F/F 制造商:HYLEC 功能描述:TERMINAL BLOCK SIX TAB
PA80F/FF 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FLACHSTECKVERTEILER 6 FASTON 16A
PA80F/F-F 制造商:HYLEC 功能描述:TERMINAL BLOCK 6 WAY 22-12 AWG 制造商:HYLEC 功能描述:TERMINAL BLOCK, 6 WAY, 22-12 AWG 制造商:HYLEC 功能描述:TERMINAL BLOCK, 6 WAY, 22-12 AWG, Connector Type:Terminal Block, Barrier, Series
PA80J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Voltage-Feedback Operational Amplifier
PA80Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Voltage-Feedback Operational Amplifier