參數(shù)資料
型號: μPA806T
廠商: NEC Corp.
英文描述: Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管)
中文描述: 微波低噪聲放大器NPN硅晶體管(微波低噪聲放大器npn型晶體管)
文件頁數(shù): 3/6頁
文件大?。?/td> 42K
代理商: ΜPA806T
μ
PA806T
3
0.5
G
T
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
2
1
2
5
10
20
50
1
I
2
2
Collector Current I
C
(mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
2
4
6
8
10
2
5
10
20
50
0
C
C
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
20
40
60
D
F
Collector Current I
C
(mA)
100
200
0
0.1
I
B
= 100
μ
A
200
μ
A
300
μ
A
400
μ
A
500
μ
A
0.2
0.5
1
2
5 V
V
CE
= 3 V
5
10
20
50 100
DC CURRENT GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
30
50
10
14
12
10
8
6
4
5 V
3 V
f = 2 GHz
0.5
Collector Current I
C
(mA)
0
1
2
3
0.5
F
r
Collector to Base Voltage V
CB
(V)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.2
1
5
10
20
N
NOISE FIGURE vs.
COLLECTOR CURRENT
1
2
5
20
50
4
f = 1 MHz
0.3
0.4
0.5
0.6
2
10
f = 2 GHz
V
CE
= 3 V
V
CE
= 1 V
3 V
5 V
V
CE
= 1 V
相關(guān)PDF資料
PDF描述
μPA808T Low Noise Microwave Amlification NPN Epitaxial Silicon Transistor(應(yīng)用于微波低噪聲放大器的NPN硅外延晶體管)
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