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參數(shù)資料
| 型號(hào)： | μPA804T |
| 廠商： | NEC Corp. |
| 英文描述： | NPN Silicon Epitaxial Transistor(NPN 外延硅晶體管) |
| 中文描述： | NPN硅外延晶體管（npn型外延硅晶體管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 50K |
| 代理商： | ΜPA804T |
1995
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
μ
PA804T
The 2SC4571 has built-in 2 transistors which were developed for UHF.
FEATURES
High f
T
f
T
= 5.0 GHz TYP. (@ V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz)
Small Collector Capacitance
C
ob
= 0.9 pF TYP. (@ V
CB
= 5 V, I
E
= 0, f = 1 MHz)
A surface Mounting Package Adopted
Built-in 2 Transistors (2
×
2SC4571)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA804T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
μ
PA804T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
60
mA
Total Power Dissipation
P
T
120 in 1 element
160 in 2 elements
Note
mW
J unction Temperature
T
j
125
C
Storage Temperature
T
stg
–55 to 125
C
Note
90 mW must not be exceeded in 1 element.
PIN CONFIGURATION (Top View)
Printed in J apan
Document No. ID-3638
(O.D. No. ID-9145)
Date Published April 1995 P
2.1±0.1
1.25
1
2
3
6
5
4
0
–
+
0
0
1
2
0
0
0
0
–
+
6
Q
1
5
4
Q
2
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
X
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
PACKAGE DRAWINGS
(Unit: mm)
The information in this document is subject to change without notice.
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